EN 60747-16-1:2002/A2:2017

Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers

Halbleiterbauelemente - Teil 16-1: Integrierte Mikrowellen-Verstärker

Dispositifs à semiconducteurs - Partie 16-1: Circuits intégrés hyperfréquences - Amplificateurs

Polprevodniške naprave - 16-1. del: Mikrovalovna integrirana vezja - Ojačevalniki - Dopolnilo A2 (IEC 60747-16-1:2001/A2:2017)

General Information

• Status: Published
• Publication Date: 25-May-2017
• Withdrawal Date: 21-Mar-2020
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/SC 47E - IEC_SC_47E
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 26-May-2017
• Completion Date: 26-May-2017
• Ref Project: SIST EN 60747-16-1:2004/A2:2017 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001/A2:2017)

Relations

• Amends: EN 60747-16-1:2002 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
• Effective Date: 24-Mar-2015

Overview

EN 60747-16-1:2002/A2:2017 (IEC 60747-16-1:2001/A2:2017) is a CENELEC-adopted amendment that updates the European and international baseline for microwave integrated circuit amplifiers. The amendment clarifies terms and definitions, revises measurement principles and test procedures, and updates normative references to improve consistency in RF device specification and compliance across member bodies.

This standard is intended for manufacturers, test laboratories and systems integrators who design, evaluate or certify microwave IC amplifiers for telecommunications, radar and other RF applications.

Key Topics

• Terms and definitions: Clause 3 is revised to provide clear definitions for key parameters such as intermodulation distortion (IMDn), nth order harmonic distortion, spurious intensity under specified load VSWR, output power and adjacent channel power ratio (ACPR).

• Measurement parameters: The amendment updates parameter titles and measurement focus for:

  • Limiting output power and limiting output power flatness
  • Intermodulation distortion (two‑tone) and related measurement principles
  • nth order harmonic distortion ratio
  • Spurious intensity under specified load VSWR
  • Adjacent channel power ratio (with modulation)
  • Power added efficiency (ηadd)

• Test procedures: Several test-procedure clauses were revised to standardize measurement practice (for example, continuous phase-angle sweeping by varying a line stretcher) and to ensure repeatable RF measurement conditions.

• Normative references: The amendment replaces and updates references to related IEC standards (e.g., IEC 60747-1, IEC 60747-4, IEC 60748-3, IEC 61340 series) and adds IEC 60050-702 for vocabulary alignment.

Applications

EN 60747-16-1:2002/A2:2017 provides practical value for:

• Component manufacturers seeking harmonized definitions and measurement methods for datasheet parameters.
• Test labs implementing standardized measurement setups for amplifier performance metrics such as IMD, ACPR, spurious emissions and power-added efficiency.
• System designers validating RF front-end components for cellular, microwave link, satellite and radar systems.
• Regulatory and certification bodies requiring consistent procedures for evaluating RF emission, linearity and stability.

Using the standard helps ensure clear communication of amplifier performance, repeatable test results, and smoother compliance across European and international markets.

Related Standards

• IEC 60747-1: General semiconductor device requirements
• IEC 60747-4: Microwave diodes and transistors (references for device-level characteristics)
• IEC 60748-3: Analogue integrated circuits
• IEC 61340-5-1 / IEC TR 61340-5-2: Electrostatic protection for electronic devices
• IEC 60050-702: Electrotechnical vocabulary (oscillations and signals)

For implementers, cross-referencing these documents ensures alignment of terminology, test setups and electrostatic protection practices when applying EN 60747-16-1:2002/A2:2017 to product development and compliance testing.

Standards Content (Sample)

SLOVENSKI STANDARD
01-julij-2017
3ROSUHYRGQLãNHQDSUDYHGHO0LNURYDORYQDLQWHJULUDQDYH]MD2MDþHYDOQLNL
'RSROQLOR$,(&$
Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747
-16-1:2001/A2:2017)
Ta slovenski standard je istoveten z: EN 60747-16-1:2002/A2:2017
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN 60747-16-1:2002/A2

NORME EUROPÉENNE
EUROPÄISCHE NORM
May 2017
ICS 31.080.99
English Version
Semiconductor devices -
Part 16-1: Microwave integrated circuits - Amplifiers
(IEC 60747-16-1:2001/A2:2017)
Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Partie 16-1: Circuits intégrés hyperfréquences - Teil 16-1: Integrierte Mikrowellen-Verstärker
Amplificateurs (IEC 60747-16-1:2001/A2:2017)
(IEC 60747-16-1:2001/A2:2017)
This amendment A2 modifies the European Standard EN 60747-16-1:2002; it was approved by CENELEC on 2017-03-22. CENELEC
members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this amendment the
status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This amendment exists in three official versions (English, French, German). A version in any other language made by translation under the
responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as
the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 60747-16-1:2002/A2:2017 E

European foreword
The text of document 47E/500/CDV, future IEC 60747-16-1:2001/A2, prepared by SC 47E "Discrete
semiconductor devices" of IEC/TC 47 "Semiconductor devices" was submitted to the IEC-CENELEC parallel
vote and approved by CENELEC as EN 60747-16-1:2002/A2:2017.

The following dates are fixed:
(dop) 2017-12-22
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2020-03-22
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of patent
rights. CENELEC shall not be held responsible for identifying any or all such patent rights.

Endorsement notice
The text of the International Standard IEC 60747-16-1:2001/A2:2017 was approved by CENELEC as a
European Standard without any modification.
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated references,
the latest edition of the referenced document (including any amendments) applies.

NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here: www.cenelec.eu

Publication Year Title EN/HD Year

Replace the existing references to IEC 60617, IEC 60747-1, IEC 60747-4, IEC 61340-5-1 and
IEC 61340-5-2, including modifications done by A1 as follows:
IEC 60617-DB -  Graphical symbols for diagrams - -
IEC 60747-1 2006 Semiconductor devices - - -
Part 1: General
+A1 2010 - -
IEC 60747-4 2007 Semiconductor devices - Discrete devices - - -
Part 4: Microwave diodes and transistors
+A1 2017  - -
IEC 61340-5-1 -  Electrostatics - EN 61340-5-1 -
Part 5-1: Protection of electronic devices from
electrostatic phenomena - General
requirements
IEC/TR 61340-5-2 -  Electrostatics - CLC/TR 61340-5-2 -
Part 5-2: Protection of electronic devices from
electrostatic phenomena - User guide
Replace the existing reference to IEC 60748-3 as follows:
IEC 60748-3 1986 Semiconductors devices - Integrated circuits - - -
Part 3: Analogue integrated circuits
+A1 1991  - -
+A2 1994  - -
Delete the existing references to IEC 60747-7:2000, IEC 60747-16-2:2001 and IEC 60747-16-4:2004
Add the following new reference:
IEC 60050-702 -  International electrotechnical vocabulary (IEV) - -
- Chapter 702: Oscillations, signals and
related devices
IEC 60747-16-1 ®
Edition 1.0 2017-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
A MENDMENT 2
AM ENDEMENT 2
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –

Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-3873-8

– 2 – IEC 60747-16-1:2001/AMD2:2017
 IEC 2017
FOREWORD
This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices,
of IEC technical committee 47: Semiconductor devices.
The text of this amendment is based on the following documents:
CDV Report on voting
47E/500/CDV 47E/518/RVC
Full information on the voting for the approval of this amendment can be found in the report
on voting indicated in the above table.
_____________
CONTENTS
Replace the titles of Clause 3, Subclauses 5.7 and 5.18 with the following new titles:
3 Terms and definitions
5.7 Limiting output power (P ) and limiting output power flatness (∆P )
o(ltg) o(ltg)
5.18 Power added efficiency (η )
add
Replace the titles of Subclauses 5.11, 5.19, 5.21, including the amendments brought to them
by Amendment 1, with the following new titles:
5.11 Intermodulation distortion (two-tone) (P /P )
n 1
5.19 nth order harmonic distortion ratio (P /P )
nth 1
5.21 Spurious intensity under specified load VSWR (P /P )
sp o
Replace the title of Subclause 5.22 added by Amendment 1 with the following new title:
5.22 Adjacent channel power ratio (P /P )
adj o(m
...