Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

IEC 60749-20:2008 provides a means of assessing the resistance to soldering heat of semiconductors packaged as plastic encapsulated surface mount devices (SMDs). This test is destructive. This second edition cancels and replaces the first edition published in 2002 and constitutes a technical revision. The main changes are as follows: - to reconcile certain classifications of IEC 60749-20 and those of IPC/JEDEC J-STD-020C; - reference IEC 60749-35 instead of Annex A of IEC 60749-20, Edition 1; - update for lead-free solder; - correct certain errors in the original Edition 1.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 20: Beständigkeit kunststoffverkappter oberflächenmontierbarer Bauelemente (SMD) gegenüber der kombinierten Beanspruchung von Feuchte und Lötwärme

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 20: Résistance des CMS à boîtiers plastique à l'effet combiné de l'humidité et de la chaleur de brasage

La CEI 60749-20:2008 fournit des moyens d'évaluer la résistance à la chaleur de brasage des semiconducteurs sous emballage comme les composants à boîtier plastique à montage en surface (CMS). Cet essai est destructif. Cette seconde édition annule et remplace la première édition publiée en 2002 et constitue une révision technique. Les principales modifications sont les suivantes: - concilier certaines classifications de la CEI 60749-20 avec celles de l'IPC/JEDEC J-STD-020C; - faire référence à la CEI 60749-35 à la place de l'annexe A de la CEI 60749-20 Edition 1; - effectuer une mise à jour pour la brasure sans plomb; - corriger certaines erreurs de l'Edition 1 originale.

Polprevodniške naprave - Metode za mehansko in klimatsko preskušanje - 20. del: Odpornost elementov SMD v plastičnih ohišjih proti kombiniranemu učinkovanju vlage in spajkalne vročine (IEC 60749-20:2008)

Ta del IEC 60749 predpisuje način ocenjevanja odpornosti polprevodnikov v obliki elementov SMD v plastičnih ohišjih proti spajkalni vročini. Ta preskus je uničujoč.

General Information

Status
Withdrawn
Publication Date
25-Nov-2009
Withdrawal Date
31-Aug-2012
Drafting Committee
Parallel Committee
Current Stage
9960 - Withdrawal effective - Withdrawal
Start Date
05-Oct-2023
Completion Date
05-Oct-2023

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Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of
plastic encapsulated SMDs to the combined effect of moisture and soldering heat (IEC
60749-20:2008)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 20:
Beständigkeit kunststoffverkappter oberflächenmontierbarer Bauelemente (SMD)
gegenüber der kombinierten Beanspruchung von Feuchte und Lötwärme (IEC 60749-
20:2008)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
20: Résistance des CMS à boîtiers plastique à l'effet combiné de l'humidité et de la
chaleur de brasage (IEC 60749-20:2008)
Ta slovenski standard je istoveten z: EN 60749-20:2009
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD
EN 60749-20
NORME EUROPÉENNE
November 2009
EUROPÄISCHE NORM
ICS 31.080.01 Supersedes EN 60749-20:2003

English version
Semiconductor devices -
Mechanical and climatic test methods -
Part 20: Resistance of plastic encapsulated SMDs
to the combined effect of moisture and soldering heat
(IEC 60749-20:2008)
Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Méthodes d'essais mécaniques Mechanische und klimatische
et climatiques - Prüfverfahren -
Partie 20: Résistance Teil 20: Beständigkeit kunststoffverkappter
des CMS à boîtiers plastique oberflächenmontierbarer Bauelemente
à l'effet combiné de l'humidité (SMD) gegenüber der kombinierten
et de la chaleur de brasage Beanspruchung von Feuchte
(CEI 60749-20:2008) und Lötwärme
(IEC 60749-20:2008)
This European Standard was approved by CENELEC on 2009-09-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Cyprus, the
Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: Avenue Marnix 17, B - 1000 Brussels

© 2009 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60749-20:2009 E
Foreword
The text of document 47/1989/FDIS, future edition 2 of IEC 60749-20, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 60749-20 on 2009-09-01.
This European Standard supersedes EN 60749-20:2003.
The main changes are as follows:
– to reconcile certain classifications of EN 60749-20 and those of IPC/JEDEC J-STD-020C;
– reference EN 60749-35 instead of Annex A of EN 60749-20:2003;
– update for lead-free solder;
– correct certain errors in EN 60749-20:2003.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2010-06-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2012-09-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60749-20:2008 was approved by CENELEC as a European
Standard without any modification.
__________
– 3 – EN 60749-20:2009
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year

IEC 60068-2-20 2008 Environmental testing - EN 60068-2-20 2008
Part 2-20: Tests - Test T: Test methods for
solderability and resistance to soldering heat
of devices with leads
1) 2)
IEC 60749-3 - Semiconductor devices - Mechanical and EN 60749-3 2002
climatic test methods -
Part 3: External visual examination

1) 2)
IEC 60749-35 - Semiconductor devices - Mechanical and EN 60749-35 2006
climatic test methods -
Part 35: Acoustic microscopy for plastic
encapsulated electronic components

1)
Undated reference.
2)
Valid edition at date of issue.

IEC 60749-20
Edition 2.0 2008-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 20: Resistance of plastic encapsulated SMDs to the combined effect of
moisture and soldering heat
Dispositifs à semiconducteurs – Méthodes d'essais mécaniques et climatiques –
Partie 20: Résistance des CMS à boîtier plastique à l'effet combiné de l'humidité
et de la chaleur de brasage
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
U
CODE PRIX
ICS 31.080.01 ISBN 2-8318-1019-8
– 2 – 60749-20 © IEC:2008
CONTENTS
FOREWORD.4
1 Scope.6
2 Normative references.6
3 General description.6
4 Test apparatus and materials.6
4.1 Humidity chamber.6
4.2 Reflow soldering apparatus.6
4.3 Holder .7
4.4 Wave-soldering apparatus .7
4.5 Solvent for vapour-phase reflow soldering.7
4.6 Flux.7
4.7 Solder .7
5 Procedure.7
5.1 Initial measurements .7
5.1.1 Visual inspection.7
5.1.2 Electrical measurement.8
5.1.3 Internal inspection by acoustic tomography .8
5.2 Drying.8
5.3 Moisture soak .8
5.3.1 General .8
5.3.2 Conditions for non-dry-packed SMDs .8
5.3.3 Moisture soak for dry-packed SMDs .8
5.4 Soldering heat .10
5.4.1 General .10
5.4.2 Method of heating by infrared convection or convection reflow
soldering.11
5.4.3 Method of heating by vapour-phase reflow soldering.12
5.4.4 Method of heating by wave-soldering.12
5.5 Recovery .13
5.6 Final measurements .14
5.6.1 Visual inspection.14
5.6.2 Electrical measurement.14
5.6.3 Internal inspection by acoustic tomography .14
6 Information to be given in the relevant specification.14
Annex A (informative) Details and descriptions of test method on resistance of plastic
encapsulated SMDs to the combined effect of moisture and soldering heat.16

Figure 1 – Method of measuring the temperature profile of a specimen.7
Figure 2 – Heating by wave-soldering .13
Figure A.1 – Process of moisture diffusion at 85 °C, 85 % RH.17
Figure A.2 – Definition of resin thickness and the first interface .17
Figure A.3 – Moisture soak time to saturation at 85 °C as a function of resin thickness .18
Figure A.4 – Temperature dependence of saturated moisture content of resin.18
Figure A.5 – Dependence of moisture content of resin at the first interface on resin
thickness under various soak conditions.19

60749-20 © IEC:2008 – 3 –
Figure A.6 – Dependence of moisture content of resin at the first interface on resin
thickness related to method A of moisture soak .20
Figure A.7 – Dependence of the moisture content of resin at the first interface on resin
thickness related to method B of moisture soak .21
Figure A.8 – Dependence of moisture content of resin at the first interface on resin
thickness related to condition B2 of method B of moisture soak .21
Figure A.9 – Temperature profile of infrared convection and convection reflow soldering
for Sn-Pb eutectic assembly.23
Figure A.10 – Temperature profile of infrared convection and convection reflow
soldering for lead-free assembly.23
Figure A.11 – Classification profile .25
Figure A.12 – Temperature profile of vapour-phase soldering (condition II-A).25
Figure A.13 – Immersion method into solder bath .26
Figure A.14 – Relation between the infrared convection reflow soldering and wave-
soldering.26
Figure A.15 – Temperature in the body of the SMD during wave-soldering .27

Table 1 – Moisture soak conditions for non-dry-packed SMDs .8
Table 2 – Moisture soak conditions for dry-packed SMDs (method A) .9
Table 3 – Moisture soak conditions for dry-packed SMDs (method B) .10
Table 4 – SnPb eutectic process – Classification reflow temperatures .11
Table 5 – Pb-free process – Classification reflow temperatures .12
Table 6 – Heating condition for vapour-phase soldering .12
Table 7 – Immersion conditions for wave-soldering.13
Table A.1 – Comparison of actual storage conditions and equivalent moisture soak

conditions befor
...

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