SIST EN 62132-4:2006
(Main)Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz -- Part 4: Direct RF power injection method
Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz -- Part 4: Direct RF power injection method
This part of IEC 62132 describes a method to measure the immunity of integrated circuits (IC) in the presence of conducted RF disturbances, e.g. resulting from radiated RF disturbances. This method guarantees a high degree of repeatability and correlation of immunity measurements. This standard establishes a common base for the evaluation of semiconductor devices used in equipment functioning in an environment subject to unwanted radio frequency electromagnetic waves.
Integrierte Schaltungen - Messung der elektromagnetischen Störfestigkeit im Frequenzbereich von 150 kHz bis 1 GHz -- Teil 4: Verfahren direkter Einspeisung der HF-Leistung
Circuits intégrés - Mesure de l'immunité électromagnétique 150 kHz à 1 GHz -- Partie 4: Méthode d'injection directe de puissance RF
Cette partie de la CEI 62132 d Décrit une méthode de mesure de l'immunité des circuits intégrés (CI) en présence de perturbations RF conduites, comme par exemple celles résultant de perturbations RF rayonnées. Cette méthode garantit un degré élevé de répétabilité et une corrélation des mesures d'immunité. Cette norme établit une base commune pour l'évaluation des dispositifs à semiconducteurs utilisés dans les matériels fonctionnant dans un environnement soumis à des ondes électromagnétiques à radiofréquences intempestives.
Integrirana vezja – Merjenje elektromagnetne odpornosti pri frekvencah od 150 kHz do 1 GHz – 4. del: Metoda z neposredno priključitvijo RF energije (IEC 62132-4:2006)
General Information
Standards Content (Sample)
SLOVENSKI SIST EN 62132-4:2006
STANDARD
oct 2006
Integrirana vezja – Merjenje elektromagnetne odpornosti pri frekvencah od
150 kHz do 1 GHz – 4. del: Metoda z neposredno priključitvijo RF energije
(IEC 62132-4:2006)
Integrated circuits – Measurement of electromagnetic immunity 150 kHz to 1 GHz –
Part 4: Direct RF power injection method (IEC 62132-4:2006)
ICS 31.200; 33.100.20 Referenčna številka
SIST EN 62132-4:2006(en)
© Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno
---------------------- Page: 1 ----------------------
EUROPEAN STANDARD
EN 62132-4
NORME EUROPÉENNE
May 2006
EUROPÄISCHE NORM
ICS 31.200
English version
Integrated circuits -
Measurement of electromagnetic immunity 150 kHz to 1 GHz
Part 4: Direct RF power injection method
(IEC 62132-4:2006)
Circuits intégrés - Integrierte Schaltungen -
Mesure de l'immunité électromagnétique Messung der elektromagnetischen
150 kHz à 1 GHz Störfestigkeit im Frequenzbereich
Partie 4: Méthode d'injection directe von 150 kHz bis 1 GHz
de puissance RF Teil 4: Verfahren direkter Einspeisung
(CEI 62132-4:2006) der HF-Leistung
(IEC 62132-4:2006)
This European Standard was approved by CENELEC on 2006-02-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62132-4:2006 E
---------------------- Page: 2 ----------------------
EN 62132-4:2006 - 2 -
Foreword
The text of document 47A/733/FDIS, future edition 1 of IEC 62132-4, prepared by SC 47A, Integrated
circuits, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was
approved by CENELEC as EN 62132-4 on 2006-02-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2006-12-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-02-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62132-4:2006 was approved by CENELEC as a European
Standard without any modification.
__________
---------------------- Page: 3 ----------------------
- 3 - EN 62132-4:2006
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year
1)
IEC 61000-4-6 Electromagnetic compatibility (EMC) - -
-
Part 4-6: Testing and measurement
techniques - Immunity to conducted
disturbances, induced by radio-frequency
fields
1) 2)
IEC 61967-4 - Integrated circuits - Measurement of EN 61967-4 2002
electromagnetic emissions, 150 kHz to 1 GHz
Part 4: Measurement of conducted emissions
- 1 ohm/150 ohm direct coupling method
IEC 62132-1 2006 Integrated circuits - Measurement of EN 62132-1 2006
electromagnetic immunity, 150 kHz to 1 GHz
Part 1: General conditions and definitions
CISPR 16-1-2 2003 Specification for radio disturbance and EN 55016-1-2 2004
immunity measuring apparatus and methods
Part 1-2: Radio disturbance and immunity
measuring apparatus - Ancillary equipment -
Conducted disturbances
1)
Undated reference.
2)
Valid edition at date of issue.
---------------------- Page: 4 ----------------------
NORME CEI
INTERNATIONALE
IEC
62132-4
INTERNATIONAL
Première édition
STANDARD
First edition
2006-02
Circuits intégrés –
Mesure de l'immunité électromagnétique
150 kHz à 1 GHz –
Partie 4:
Méthode d'injection directe de puissance RF
Integrated circuits –
Measurement of electromagnetic
immunity 150 kHz to 1 GHz –
Part 4:
Direct RF power injection method
IEC 2006 Droits de reproduction réservés Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
CODE PRIX
T
PRICE CODE
Commission Electrotechnique Internationale
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
Pour prix, voir catalogue en vigueur
For price, see current catalogue
---------------------- Page: 5 ----------------------
62132-4 IEC:2006 – 3 –
CONTENTS
FOREWORD.7
1 Scope.11
2 Normative references.11
3 Terms and definitions .11
4 General .13
4.1 Measurement basics.13
4.2 Single pin direct power injection.17
4.3 Multiple pin direct power injection into pins of differential mode systems .19
5 Test conditions .19
6 Test equipment.19
6.1 General .19
6.2 RF power source .21
6.3 RF power meter and directional coupler .21
7 Test set-up .21
7.1 General .21
7.2 Power injection set-up .21
7.3 Test circuit board.23
7.4 Characteristics of the power injection set-up .25
7.5 Decoupling networks.25
8 Test procedure .27
8.1 General .27
8.2 Specific test procedure .27
9 Test report.29
Annex A (informative) Example of a specification of immunity levels e.g. for automotive
applications.31
Annex B (informative) Hints for the best installation of a test set-up with respect to RF .35
Annex C (informative) Constant peak test level explanation .47
Bibliography .49
Figure 1 – Arrangement of a direct injection test set-up .15
Figure 2 – Illustration of the principle of the single pin power injection.17
Figure 3 – Illustration of the principle of multiple pin power injection .19
Figure 4 – Example of the routing from the injection port to a pin of the DUT .23
Figure 5 – Example of a S magnitude measurement result (first resonance above 1 GHz).25
21
Figure 6 – Flowchart of a test procedure.29
---------------------- Page: 6 ----------------------
62132-4 IEC:2006 – 5 –
Figure B.1 – Installation of a connector on the test board nearby the DUT.37
Figure B.2 – Using a shielding box placing the connector as close as possible to the
DUT (optional series resistor may be added) .37
Figure B.3 – Accessing a high pin count DUT by a large main board and an IC specific
board connected by spring contact pins .39
Figure B.4 – DC decoupling of a high current pin .39
Figure B.5 – Test set-up with mandatory blocking capacitor .41
Figure B.6 – Layout example for DUT with mandatory blocking capacitor .41
Figure B.7 – Test set-up example with the load on the test set-up.43
Figure B.8 – Example of a decoupling network for an input with high impedance.43
Figure B.9 – Termination of pins not to be tested with a typical impedance to reproduce
crosstalk currents.45
Figure B.10 – Example of power injection into two pins using the mandatory termination
of the high speed CAN bus.45
Table 1 – System and IC parameters affecting immunity.17
Table A.1 – Example of immunity level ranges.31
---------------------- Page: 7 ----------------------
62132-4 IEC:2006 – 7 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
INTEGRATED CIRCUITS –
MEASUREMENT OF ELECTROMAGNETIC IMMUNITY
150 kHz TO 1 GHz –
Part 4: Direct RF power injection method
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62132-4 has been prepared by subcommittee 47A: Integrated
circuits, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47A/733/FDIS 47A/741/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
---------------------- Page: 8 ----------------------
62132-4 IEC:2006 – 9 –
IEC 62132 consists of the following parts, under the general title Integrated circuits –
Measurement of electromagnetic immunity, 150 kHz to 1 GHz:
Part 1: General conditions and definitions
1
Part 2: (G-) TEM cell method
1
Part 3: Bulk current injection (BCI) method
Part 4: Direct RF power injection method
Part 5: Workbench Faraday cage method
The committee has decided that the contents of this publication will remain unchanged until the
maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
___________
1
Under consideration.
---------------------- Page: 9 ----------------------
62132-4 IEC:2006 – 11 –
INTEGRATED CIRCUITS –
MEASUREMENT OF ELECTROMAGNETIC IMMUNITY
150 kHz TO 1 GHz –
Part 4: Direct RF power injection method
1 Scope
This part of IEC 62132 describes a method to measure the immunity of integrated circuits (IC)
in the presence of conducted RF disturbances, e.g. resulting from radiated RF disturbances.
This method guarantees a high degree of repeatability and correlation of immunity
measurements.
This standard establishes a common base for the evaluation of semiconductor devices used in
equipment functioning in an environment subject to unwanted radio frequency electromagnetic
waves.
2 Normative references
The following referenced documents are indispensable for the application of this document. For
dated references, only the edition cited applies. For undated references, the latest edition of
the referenced document (including any amendments) applies.
IEC 61967-4, Integrated circuits – Measurement of electromagnetic emissions, 150 kHz to
1 GHz – Part 4: Measurement of conducted emissions – 1 Ω/ 150 Ω direct coupling method
IEC 62132-1:2006, Integrated circuits – Measurement of electromagnetic immunity, 150 kHz to
1 GHz – Part 1: General conditions and definitions
IEC 61000-4-6, Electromagnetic compatibility (EMC) – Part 4-6: Testing and measurement
techniques – Immunity to conducted disturbances, induced by radio-frequency fields
CISPR 16-1-2:2003, Specification for radio disturbance and immunity measuring apparatus and
methods – Part 1-2: Radio disturbance and immunity measuring apparatus. Ancillary equipment.
Conducted disturbances
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 62132-1 apply.
---------------------- Page: 10 ----------------------
62132-4 IEC:2006 – 13 –
4 General
4.1 Measurement basics
The minimum electromagnetic immunity level required for an IC depends on the maximum
permitted level of RF disturbance to which an electronic system can be submitted. The value of
the immunity level is dependent on system and application specific parameters. To determine
the immunity performance of an IC, a simple measurement procedure, and a measurement set-
up in which resonances are avoided, is required to guarantee a high degree of repeatability.
The following points out the base of this test.
The largest geometry found in an integrated circuit is the leadframe. The size of the leadframe
is in the range of some centimetres or smaller. The dimensions of the structures on chip are
even up to two magnitudes smaller than the dimension of the leadframe. For a frequency range
below 1 GHz, this leadframe, as well as the structures on-chip, are not regarded as efficient
antennas for the reception of unwanted RF energy. It is the cable harness and/or the traces of
a printed circuit board which constitute efficient antennas. Thus, an IC receives the unwanted
RF energy through the pins connected to the wires of such cables. Because of this, the
electromagnetic immunity of an IC can be characterized by conducted RF disturbances (i.e. RF
forward power) instead of field parameters as is usually the case in module and/or system
testing.
For module and system tests, the forward power provided to a circuit by the cable harness or
the traces on a printed circuit board (PCB) acting as antennas can be measured or estimated.
This power is considered to be a forward power delivered to the circuit, no matter whether it will
be reflected or absorbed. In fact it has been observed that many ICs are most susceptible to
the disturbances at quite high reflections. This is due to the fact that in this case either injected
RF currents or applied RF voltages reach the highest possible values. To characterize the
immunity of an IC, the forward power needed to cause malfunction is measured. The
malfunction may be classified from A to D according to the performance classes defined in
IEC 62132-1.
Figure 1 shows the principal test hardware configuration with optional automatic control by
the PC.
---------------------- Page: 11 ----------------------
62132-4 IEC:2006 – 15 –
DC supply
or signal
generator
Test
Decoupling
50 Ω coax
network
PCB
Directional
coupler DC
Block
RF amplifier
RF injection
port
DUT
P
P
for
refl
RF
generator
Optional:
control PC
RF Power
meters
BUS
DUT
monitor
IEC 2649/05
Key
P forward power
for
P reflected power
refl
Figure 1 – Arrangement of a direct injection test set-up
The frequency variable RF generator provides the RF disturbance that is amplified by the
connected RF amplifier. The directional coupler and the RF power meters are used to measure
the actual forward power injected into the device under test (DUT). At the RF injection port the
RF power is delivered to the test printed circuit board (PCB). The RF amplifier is decoupled by
a DC block to avoid supplying DC into the amplifier output. The DC supply is prevented from
getting RF power by a decoupling network that has a high RF impedance on the side that is
connected to the RF injection path.
To monitor the behaviour of the DUT an oscilloscope, or other monitoring device preferably
with a pass/fail function etc., can be used. To decouple the RF signal crosstalk of the DUT
from the low frequency measurement performed by the oscilloscope, a second decoupling
network is used. The measurement equipment can be optionally controlled by a computer, if
desired.
Any function inside an IC can be affected even if it is not connected to the pin under test.
Therefore the operation mode(s) of the IC shall be chosen in a way that all functions of the IC
are used during the test.
ICs are often used in different configurations based on the application. In order to understand
the influence of each individual pin, each pin that is expected to be exposed to RF disturbance
should be tested individually. Multiple pin testing is permissible into pins of differential mode
systems.
---------------------- Page: 12 ----------------------
62132-4 IEC:2006 – 17 –
The forward power needed to cause malfunction of an IC depends on several parameters, like
those shown in Table 1.
Table 1 – System and IC parameters affecting immunity
IC related parameters Module related parameters
Circuit design Protection of the pin by external components
Chip layout Operation mode of the IC
Ground/supply distribution system inside the IC Ground system
Pinning assignment and bond wire design Board layout
Package Impedance of wiring harness and load
Process technology
Circuitry connected to a pin
Knowledge of the immunity of an IC (the highest forward power that does not affect the function
of the IC) allows the user to decide if he needs external protection means and how much effort
has to be spent for external protection.
4.2 Single pin direct power injection
For highest test selectivity, the RF power injected at the RF injection port is directly applied to a
single pin of an IC (see Figure 2). A capacitor may be used as a DC block, while a resistor may
be used for current limitation. By default, the capacitor value can be chosen as 6,8 nF, as
specified in IEC 61967-4. The resistor value can be, by default, 0 Ω. Other values up to 100 Ω
can be chosen if functionally required. Chosen R and C values shall be stated in the test report.
NOTE When the series resistor is 0 Ω, each input or output of the DUT will be loaded by the 50 Ω of the RF power
injection system.
Test PCB
RF-injection
port
C R
DUT
RF power
IEC 2650/05
Figure 2 – Illustration of the principle of the single pin power injection
---------------------- Page: 13 ----------------------
62132-4 IEC:2006 – 19 –
4.3 Multiple pin direct power injection into pins of differential mode systems
If two or more pins are used to transfer information as differential mode signal in analogue or
digital form, then multiple pin direct RF power injection can be used to test the common mode
immunity of such analogue or digital systems (see Figure 3). As an example, see Clause B.6
for a CAN-bus illustration. Multiple pin testing neglects phase dependence of differential mode
effects.
Test PCB
RF-injection R
C
port
DUT
RF power C R
IEC 2651/05
Figure 3 – Illustration of the principle of multiple pin power injection
5 Test conditions
General test conditions are specified in IEC 62132-1. Additional test conditions are specified in
the following paragraphs.
The test levels of the forward power depend on the application of the DUT and the pin which is
being tested. The maximum forward power level of a CW (continuous wave) RF signal for
testing an externally unprotected IC-pin can be up to about 5 W (37 dBm). If the IC pin is
designed to operate with external protection, then the maximum forward power level can be
decreased (see examples in Annex A).
For testing the DUT, CW and/or AM (amplitude modulated) signals as agreed by the users
shall be used. By default, the AM signal of 1 kHz 80 % is recommended for testing. If other
modulations are used, they shall be stated in the test report.
When an AM signal is used, the peak power shall be the same as for CW (constant peak test
level, see Annex C for information).
6 Test equipment
6.1 General
Test equipment for this method is specified both in IEC 62132-1 and as follows.
---------------------- Page: 14 ----------------------
62132-4 IEC:2006 – 21 –
6.2 RF power source
The RF power source consists of the RF signal generator and an RF power amplifier and shall
be able to provide sufficient power even into a mismatched load. It is recommended to use an
amplifier with a higher power capability (10–50 W) than needed for the maximum forward
power level (e.g. 5 W). The output impedance of the power source shall be 50 Ω
(recommended VSWR <1,2) to absorb reflected waves. If the amplifier does not have this
impedance, an attenuator for matching shall be placed between the amplifier and the
transmission line. The spurious emission of the RF power source shall be at least 20 dB below
the carrier level. Amplitude modulation shall be possible. The maximum power level is
dependent on the application of the DUT and the pin which is tested.
6.3 RF power meter and directional coupler
The VSWR of the directional coupler shall be less than 1,15 in the applicable frequency range.
For the power measurement during modulation, it is recommended to use a power meter with
peak envelope measurement capability.
7 Test set-up
7.1 General
A general test set-up is illustrated in Figure 1. It consists of a power injection and
measurement set-up, the DUT on a test PCB, decoupling networks, DUT monitoring device and
a test control unit. The measurement basics are discussed in 4.1.
7.2 Power injection set-up
The power injection set-up consists of two parts. The first part is not on the test board. It
comprises
– RF power source (RF-generator, amplifier, attenuator for matching if necessary),
– coaxial cables,
– RF connectors,
– directional coupler with measuring head for forward power,
as external devices in the periphery of the DUT test board.
The second part of the power injection set-up is placed directly on the testboard as
– RF injection port to connect the coaxial cables and the transmission line on PCB,
– the connection from the end of the transmission line (RF injection port) via the DC block to
the DUT,
– DC biasing networks connected to the pin under test.
Basically, this injection set-up has a mismatched termination. A high percentage of the power
delivered to the DUT may be reflected due to the fact that an IC is not a 50 Ω termination.
Matching the impedance of the DUT using a dissipative network would lead to measuring the
power dissipation of matching network rather than the power delivered to the DUT. Power
reflected by the DUT should not be reflected to the DUT again by an impedance discontinuity
---------------------- Page: 15 ----------------------
62132-4 IEC:2006 – 23 –
somewhere else in the power injection set-up. Therefore, the power injection set-up which is
not on the test board shall be a 50 Ω system. This leads to a set of recommended parameters
for the test board , the test set-up and the components belonging to the test set-up.
7.3 Test circuit board
The use of a printed circuit board with a common RF ground plane for immunity testing of ICs
is strongly recommended. The DUT should be placed on the test board without sockets
...
Questions, Comments and Discussion
Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.