SIST EN 62374-1:2011
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010)
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010)
This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
Halbleiterbauelemente - Teil 1: Prüfung auf zeitabhängigen dielektrischen Durchbruch (TDDB) bei Isolationsschichten zwischen metallischen Leiterbahnen (IEC 62374-1:2010)
Dispositifs à semiconducteurs - Partie 1: Essai de rupture diélectrique en fonction du temps (TDDB) pour les couches intermétalliques (CEI 62374-1:2010)
La CEI 62374-1:2010 décrit une méthode d'essai, une structure d'essai et une méthode d'estimation de la durée de vie d'un essai de rupture diélectrique en fonction du temps (TDDB) pour des couches intermétalliques appliquées dans des dispositifs à semiconducteurs.
Polprevodniški elementi - 1. del: Preskus dielektrične plasti vrat s časovno odvisnim dielektričnim prebojem (TDDB) (IEC 62374-1:2010)
Ta del IEC 62374 opisuje preskusno metodo, preskusno strukturo in metodo ocenjevanja življenjske dobe preskusa dielektrične plasti vrat s časovno odvisnim dielektričnim prebojem, ki se uporablja v polprevodniških elementih.
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Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN 62374-1:2011
01-januar-2011
1DGRPHãþD
SIST EN 62374:2008
3ROSUHYRGQLãNLHOHPHQWLGHO 3UHVNXVGLHOHNWULþQHSODVWLYUDWVþDVRYQR
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Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for
inter-metal layers (IEC 62374-1:2010)
Halbleiterbauelemente - Teil 1: Prüfung auf zeitabhängigen dielektrischen Durchbruch
(TDDB) bei Isolationsschichten zwischen metallischen Leiterbahnen (IEC 62374-1:2010)
Dispositifs à semiconducteurs - Partie 1: Essai de rupture diélectrique en fonction du
temps (TDDB) pour les couches intermétalliques (CEI 62374-1:2010)
Ta slovenski standard je istoveten z: EN 62374-1:2010
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62374-1:2011 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
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SIST EN 62374-1:2011
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SIST EN 62374-1:2011
EUROPEAN STANDARD
EN 62374-1
NORME EUROPÉENNE
November 2010
EUROPÄISCHE NORM
ICS 31.080 Supersedes EN 62374:2007
English version
Semiconductor devices -
Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal
layers
(IEC 62374-1:2010)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Partie 1: Essai de rupture diélectrique en Teil 1: Prüfung auf zeitabhängigen
fonction du temps (TDDB) pour les dielektrischen Durchbruch (TDDB) bei
couches intermétalliques Isolationsschichten zwischen metallischen
(CEI 62374-1:2010) Leiterbahnen
(IEC 62374-1:2010)
This European Standard was approved by CENELEC on 2010-11-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2010 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62374-1:2010 E
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SIST EN 62374-1:2011
EN 62374-1:2010 - 2 -
Foreword
The text of document 47/2063/FDIS, future edition 1 of IEC 62374-1, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62374-1 on 2010-11-01.
This European Standard supersedes EN 62374:2007.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2011-08-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2013-11-01
__________
Endorsement notice
The text of the International Standard IEC 62374-1:2010 was approved by CENELEC as a European
Standard without any modification.
__________
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SIST EN 62374-1:2011
IEC 62374-1
®
Edition 1.0 2010-09
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices –
Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
Dispositifs à semiconducteurs –
Partie 1: Essai de rupture diélectrique en fonction du temps (TDDB) pour les
couches intermétalliques
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
P
CODE PRIX
ICS 31.080 ISBN 978-2-88912-178-6
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
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SIST EN 62374-1:2011
– 2 – 62374-1 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope.5
2 Terms and definitions .5
3 Test equipment.6
4 Test samples.6
4.1 General .6
4.2 Test structure .6
5 Procedures.8
5.1 General .8
5.2 Pre-test .8
5.3 Test conditions.8
5.3.1 General .8
5.3.2 Electric field .8
5.3.3 Temperature.9
5.4 Failure criterion .9
6 Lifetime estimation .10
6.1 General .10
6.2 Acceleration model.10
6.3 Formula of E model .10
6.4 A procedure for lifetime estimation .10
7 Lifetime dependence on inter-metal layer area .13
8 Summary.13
Annex A (informative) Engineering supplementation for lifetime estimation .14
Bibliography.16
Figure 1 – Schematic image of test structure (comb and serpent pattern) .7
Figure 2 – Schematic image of test structure (comb and comb pattern) .7
Figure 3 – Cross-sectional image of test structure for line to stacked line including via .8
Figure 4 – Cross-sectional image of test structure for stacked line to stacked line
including via .8
Figure 5 – Test flow diagram of constant voltage stress method .9
Figure 6 – Weibull distribution plot.11
Figure 7 – Procedure to estimate the acceleration factor due to the electric field
dependence.12
Figure 8 – Procedure to estimate the activation energy using an Arrhenius plot .12
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SIST EN 62374-1:2011
62374-1 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 1: Time-dependent dielectric breakdown (TDDB)
test for inter-metal layers
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62374-1 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2063/FDIS 47/2077/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all the parts in the IEC 62374 series, under the general title Semiconductor devices,
can be found on the IEC website.
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SIST EN 62374-1:2011
– 4 – 62374-1 © IEC:2010
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
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SIST EN 62374-1:2011
62374-1 © IEC:2010 – 5 –
SEMICONDUCTOR DEVICES –
Part 1: Time-dependent dielectric breakdown (TDDB)
test for inter-metal layers
1 Scope
This part of IEC 62374 describes a test method, test structure and lifetime estimation method
of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in
semiconductor devices.
2 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
2.1
leakage current of inter-metal layer
I
leak
current through the dielectric layer when a use voltage is applied
2.2
initial leakage current of inter-metal layer
I
leak-0
leakage current of inter-metal layer before a stress voltage is applied
2.3
compliance current
I
comp
maximum current of the voltage-forcing equipment
NOTE A compliance limit can be specified for a particular test.
2.4
measured leakage current of inter-metal layer
I
meas
measured current in constant voltage stress (CVS) test
2.5
breakdown time
t
bd
summation of time during which stress voltage is applied to inter-metal layer until failure
NOTE In CVS test, applied stress voltage is interrupted by measuring and assessing repeatedly (see Figure 5).
2.6
dielectric layer thickness
t
d
physical thickness of dielectric layer which is pitched between metal lines
2.7
stress voltage
V
stress
voltage applied during CVS test
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SIST EN 62374-1:2011
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