ASTM F980M-96

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]

SCOPE
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.  
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 31-Dec-1995
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaced By: ASTM F980M-96(2003) - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric]
• Effective Date: 10-Jun-1996

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 980M – 96
METRIC
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
Displacement Damage in Silicon Semiconductor Devices
1
[Metric]
This standard is issued under the fixed designation F 980M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope 3. Terminology
1.1 This guide defines the requirements and procedures for 3.1 Definitions of Terms Specific to This Standard:
testing silicon discrete semiconductor devices and integrated 3.1.1 annealing factor—the ratio of the displacement dam-
circuits for rapid-annealing effects from displacement damage age (as manifested in device parametric measurements) as a
resulting from neutron radiation. This test will produce degra- function of time following a pulse of neutrons and the
dation of the electrical properties of the irradiated devices and displacement damage remaining at the time the initial damage
should be considered a destructive test. Rapid annealing of achieves quasi equilibrium, approximately 1000 s.
displacement damage is usually associated with bipolar tech- 3.1.1.1 Discussion—Annealing factors have typical values
nologies. of 2 to 10 for these periods of time following irradiation; see
4
1.2 This standard does not purport to address all of the Refs (1, 2, 3, 4, 5, 6, 7).
safety concerns, if any, associated with its use. It is the 3.1.2 in situ tests—electrical measurements made on de-
responsibility of the user of this standard to consult and vices before, after, or during irradiation while they remain in
establish appropriate safety and health practices and deter- the immediate vicinity of the irradiation location. All rapid-
mine the applicability of regulatory limitations prior to use. annealing measurements are performed in situ because mea-
surement must begin immediately following irradiation (usu-
2. Referenced Documents
ally <1 ms).
2.1 ASTM Standards: 3.1.3 remote tests—electrical measurements made on de-
E 666 Practice for Calculating Absorbed Dose from
vices that are physically removed from the irradiation location.
2
Gamma or X Radiation For the purpose of this guide, remote tests are used only for the
E 720 Guide for Selection of a Set of Neutron-Activation
characterization of the parts before and after they are subjected
Foils for Determining Neutron Spectra Used in Radiation- to the neutron radiation (see 6.4).
2
Hardness Testing of Electronics
4. Summary of Guide
E 721 Guide for Determining Neutron Energy Spectra with
Neutron-Activation Foils for Radiation-Hardness Testing 4.1 A rapid-annealing radiation test requires continual time-
2
of Electronics sequential electrical-parameter measurements of key param-
E 722 Practice for Characterizing Neutron Energy Fluence eters of a device be made immediately following exposure to a
Spectra in Terms of An Equivalent Monoenergetic Neutron pulse of neutron radiation capable of causing significant
2
Fluence for Radiation-Hardness Testing of Electronics displacement damage.
F 1032 Guide for Measuring Time-Dependent Total-Dose 4.2 Because many factors enter into the effects of the
Effects in Semiconductor Devices Exposed to Pulsed radiation on the part, parties to the test must establish many
3
Ionizing Radiation circumstances of the test before the validity of the test can be
established or the results of one group of parts can be
meaningfully compared with those of another group. Those
1
This guide is under the jurisdiction of ASTM Committee F-1 on Electronics and
factors that must be established are as follows:
is the direct responsiblity of Subcommittee F01.11 on Quality and Hardness
Assurance.
Current edition approved June 10, 1996. Published August 1996. Originally
published as F 980 – 86. Last previous edition F 980 – 92.
2 4
Annual Book of ASTM Standards, Vol 12.02. The boldface numbers in parentheses refer to the list of references at the end of
3
Discontinued; see 1993 Annual Book of ASTM Standards, Vol 10.04. this standard.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 980M – 96
4.2.1 Radiation Source—The type and characteristics of the are two types commonly used; the bare-assembly fast-burst
neutron radiation source to be used (see 6.2).
reactor and the water-moderated TRIGA type (see Ref (8)).
4.2.2 Dose Rate Range—The range of ionizing dose
...