EN 60747-15:2012
(Main)Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
IEC 60747-15:2010 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices. The main changes with respect to previous edition are listed below.
a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses.
b) Clause 6, 7 were re-edited as a part of 'Measuring methods' with amendment of suitable addition and deletion.
c) Clause 8 was amended by suitable addition and deletion.
d) Annex C, D and Bibliography were deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.
Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 15: Isolierte Leistungshalbleiter
Dispositifs à semi-conducteurs - Dispositifs discrets - Partie 15: Dispositifs de puissance à semiconducteurs isolés
La CEI 60747-15:2010 donne les exigences relatives aux dispositifs de puissance à semi-conducteurs isolés avec circuits de commande intégrés. Ces exigences s'ajoutent à celles données dans d'autres parties de la CEI 60747 pour les dispositifs de puissance non-isolés correspondants. Les modifications principales par rapport à l'édition précédente sont les suivantes:
a) Les Articles 3, 4 et 5 ont été réédités et certains ont été associés à d'autres paragraphes.
b) Les Articles 6 et 7 ont été réédités et font partie des 'Méthodes de mesure' avec les ajouts et suppressions correspondants.
c) L'Article 8 a été modifié par les ajouts et suppressions appropriés correspondants.
d) Les Annexes C, D et la Bibliographie ont été supprimées.
Cette publication doit être lue conjointement avec la CEI 60747-1:2006.
Polprevodniški elementi - Diskretni elementi - 15. del: Izolirani močnostni polprevodniški elementi
Ta del standarda IEC 60747 opredeljuje zahteve za izolirane močnostne polprevodniške elemente in ne vključuje elementov z vgrajenimi krmilnimi tokokrogi. Te zahteve so dodatek k zahtevam iz drugih delov standarda IEC 60747 za ustrezne neizolirane močnostne elemente.
General Information
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Standards Content (Sample)
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 15: Isolierte LeistungshalbleiterDispositifs à semi-conducteurs - Dispositifs discrets - Partie 15: Dispositifs de puissance à semiconducteurs isolésSemiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices31.080.01Polprevodniški elementi (naprave) na splošnoSemiconductor devices in generalICS:Ta slovenski standard je istoveten z:EN 60747-15:2012SIST EN 60747-15:2012en01-maj-2012SIST EN 60747-15:2012SLOVENSKI
STANDARD
EUROPEAN STANDARD EN 60747-15 NORME EUROPÉENNE
EUROPÄISCHE NORM March 2012
CENELEC European Committee for Electrotechnical Standardization Comité Européen de Normalisation Electrotechnique Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2012 CENELEC -
All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60747-15:2012 E
ICS 31.080.99 Supersedes EN 60747-15:2004
English version
Semiconductor devices -
Discrete devices -
Part 15: Isolated power semiconductor devices (IEC 60747-15:2010)
Dispositifs à semi-conducteurs -
Dispositifs discrets -
Partie 15: Dispositifs de puissance à semiconducteurs isolés (CEI 60747-15:2010)
Halbleiterbauelemente -
Einzel-Halbleiterbauelemente -
Teil 15: Isolierte Leistungshalbleiter (IEC 60747-15:2010)
This European Standard was approved by CENELEC on 2011-01-20. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom.
Foreword The text of document 47E/403/FDIS, future edition 2 of IEC 60747-15, prepared by SC 47E, "Discrete semiconductor devices", of IEC TC 47, "Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60747-15:2012. The following dates are fixed: – latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement
(dop)
2012-09-16 – latest date by which the national standards conflicting
with the EN have to be withdrawn
(dow)
2014-01-20 This European Standard supersedes EN 60747-15:2004. The main changes with respect to EN 60747-15:2004 are listed below. a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses. b) Clause 6, 7 were re-edited as a part of “Measuring methods” with amendment of suitable addition and deletion. c) Clause 8 was amended by suitable addition and deletion. d) Annex C, D and Bibliography were deleted. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent rights. __________ Endorsement notice The text of the International Standard IEC 60747-15:2010 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60112 NOTE
Harmonized as EN 60112. IEC 61287-1:2005 NOTE
Harmonized as EN 61287-1:2006 (not modified). __________
- 3 - EN 60747-15:2012 Annex ZA (normative)
Normative references to international publications with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
NOTE
When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies.
Publication Year Title EN/HD Year
IEC 60270 - High-voltage test techniques - Partial discharge measurements EN 60270 -
IEC 60664-1 2007 Insulation coordination for equipment within low-voltage systems -
Part 1: Principles, requirements and tests EN 60664-1 2007
IEC 60721-3-3 1994 Classification of environmental conditions - Part 3: Classification of groups of environmental parameters and
their severities - Section 3: Stationary use at weatherprotected locations EN 60721-3-3 1995
IEC 60747-1 2006 Semiconductor devices -
Part 1: General - -
IEC 60747-2 - Semiconductor devices - Discrete devices and integrated circuits -
Part 2: Rectifier diodes - -
IEC 60747-6 - Semi conductor devices -
Part 6: Thyristors - -
IEC 60747-7 - Semiconductor devices -
Part 7: Bipolar transistors - -
IEC 60747-8 - Semiconductor devices -
Part 8: Field-effect transistors - -
IEC 60747-9 - Surface mounting technology - Discrete devices -
Part 9: Insulated-gate bipolar transistors (IGBTs) - -
IEC 60749-5 - Semiconductor devices - Mechanical and climatic test methods -
Part 5: Steady-state temperature humidity bias life test EN 60749-5 -
IEC 60749-6 - Semiconductor devices - Mechanical and climatic test methods -
Part 6: Storage at high temperature EN 60749-6 -
IEC 60749-10 - Semiconductor devices - Mechanical and climatic test methods -
Part 10: Mechanical shock EN 60749-10 -
IEC 60749-12 - Semiconductor devices - Mechanical and climatic test methods -
Part 12: Vibration, variable frequency EN 60749-12 -
Publication Year Title EN/HD Year IEC 60749-15 - Semiconductor devices - Mechanical and climatic test methods -
Part 15: Resistance to soldering temperature for through-hole mounted devices EN 60749-15 -
IEC 60749-21 - Semiconductor devices - Mechanical and climatic test methods -
Part 21: Solderability EN 60749-21 -
IEC 60749-25 - Semiconductor devices - Mechanical and climatic test methods -
Part 25: Temperature cycling EN 60749-25 -
IEC 60749-34 - Semiconductor devices - Mechanical and climatic test methods -
Part 34: Power cycling EN 60749-34 -
IEC 60747-15 Edition 2.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices – Discrete devices –
Part 15: Isolated power semiconductor devices
Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 15: Dispositifs de puissance à semiconducteurs isolés
INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE T ICS 31.080.99 PRICE CODECODE PRIXISBN 978-2-88912-310-0
– 2 – 60747-15 Ó IEC:2010 CONTENTS FOREWORD . 4 1 Scope . 6 2 Normative references . 6 3 Terms and definitions . 7 4 Letter symbols . 8 4.1 General . 8 4.2 Additional subscripts/symbols . 8 4.3 List letter symbols . 8 4.3.1 Voltages and currents . 8 4.3.2 Mechanical symbols . 8 4.3.3 Other symbols . 9 5 Essential ratings (limiting values) and characteristics . 9 5.1 General . 9 5.2 Ratings (limiting values). 9 5.2.1 Isolation voltage (Visol) . 9 5.2.2 Peak case non-rupture current (IRSMC or ICNR) (where appropriate). 9 5.2.3 Terminal current (ItRMS) (where appropriate), . 9 5.2.4 Total power dissipation (Ptot) . 9 5.2.5 Temperatures . 9 5.2.6 Mechanical ratings . 10 5.2.7 Climatic ratings (where appropriate) . 10 5.3 Characteristics . 10 5.3.1 Mechanical characteristics . 10 5.3.2 Parasitic inductance (Lp) . 11 5.3.3 Parasitic capacitances (Cp) . 11 5.3.4 Partial discharge inception voltage (ViM or Vi(RMS)) (where appropriate) . 11 5.3.5 Partial discharge extinction voltage (VeM or Ve(RMS)) (where appropriate) . 11 5.3.6 Thermal resistances . 11 5.3.7 Transient thermal impedance (Zth) . 12 6 Measurement methods . 12 6.1 Verification of isolation voltage rating between terminals and base plate (Visol) . 12 6.2 Methods of measurement . 13 6.2.1 Partial discharge inception and extinction voltages (Vi) (Ve) . 13 6.2.2 Parasitic inductance (Lp) . 13 6.2.3 Parasitic capacitance terminal to case (Cp) . 15 6.2.4 Thermal characteristics . 16 7 Acceptance and reliability . 18 7.1 General requirements . 18 7.2 List of endurance tests . 19 7.3 Acceptance defining criteria . 19 7.4 Type tests and routine tests . 19 7.4.1 Type tests . 19 7.4.2 Routine tests . 20 Annex A (informative)
Test method of peak case non-rupture current . 21 SIST EN 60747-15:2012
60747-15 Ó IEC:2010 – 3 – Annex B (informative)
Measuring method of the thickness of thermal compound paste . 24 Bibliography . 25
Figure 1 – Basic circuit diagram for isolation breakdown withstand voltage test (“high pot test”) with Visol . 12 Figure 2 – Circuit diagram for measurement of parasitic inductances (Lp) . 14 Figure 3 – Wave forms . 15 Figure 4 – Circuit diagram for measurement of parasitic capacitance Cp . 16 Figure 5 – Cross-section of an isolated power device with reference points for temperature measurement of Tc and Ts . 17 Figure A.1 – Circuit diagram for test of peak case non-rupture current ICNR . 21 Figure B.1 – Example of a measuring gauge for a layer of thermal compound paste
of a thickness between 5 mm and 150 mm . 24
Table 1 – Endurance tests . 19 Table 2 – Acceptance defining characteristics for endurance and reliability tests . 19 Table 3 – Minimum type and routine tests for isolated power semiconductor devices . 20
– 4 – 60747-15 Ó IEC:2010 INTERNATIONAL ELECTROTECHNICAL COMMISSION ____________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 15: Isolated power semiconductor devices
FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Avai
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