Nanomanufacturing - Key control characteristics - Part 2-4: Carbon nanotube materials - Test methods for determination of resistance of individual carbon nanotubes

IEC TS 62607-2-4:2020 specifies the test method for determining the resistivity and the contact resistance of an individual CNT and the dependability of the measurement.
This document includes:
– outlines of the experimental procedures used to measure resistance of carbon nanotubes,
– methods of interpretation of results and discussion of data analysis, and
– case studies.

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IEC TS 62607-2-4 ®
Edition 1.0 2020-04
Nanomanufacturing – Key control characteristics –
Part 2-4: Carbon nanotube materials – Test methods for determination
of resistance of individual carbon nanotubes
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IEC TS 62607-2-4 ®
Edition 1.0 2020-04
Nanomanufacturing – Key control characteristics –

Part 2-4: Carbon nanotube materials – Test methods for determination

of resistance of individual carbon nanotubes

ICS 07.030; 07.120 ISBN 978-2-8322-7968-7

– 2 – IEC TS 62607-2-4:2020 © IEC 2020
1 Scope . 6
2 Normative references . 6
3 Terms, definitions, and abbreviated terms . 6
3.1 Terms and definitions . 6
3.2 Abbreviated terms . 8
4 Measurement of resistance . 8
4.1 General . 8
4.2 Method for processing and fabrication of DUT . 8
4.3 4-probe measurement . 8
5 Reporting data . 9
6 Data analysis / interpretation of results (Annex A) . 10
6.1 General . 10
6.2 Measurement error . 10
6.3 Need to prepare the proper electric probing circuit . 11
6.4 Need to prepare the proper substrate and electric contact . 11
6.5 Dynamic range . 11
6.6 Current density . 11
6.7 Voltage bias of the substrate . 11
6.8 Measurement in vacuum . 11
Annex A (informative) Case study . 12
A.1 4-probe measurement of MWCNT . 12
A.1.1 I-V measurements of MWCNT. 12
A.1.2 Fabrication process information of MWCNT and DUT . 14
A.2 4-probe measurement of SWCNT . 15
A.2.1 I-V measurements of SWCNT . 15
A.2.2 Fabrication process information of SWCNT and DUT . 18
Bibliography . 19

Figure 1 – 4-probe measurement in a SEM chamber . 9
Figure 2 – A crooked/curved CNT under measurement . 10
Figure 3 – I-V measurement of a sufficiently straight CNT . 11
Figure A.1 – I-V measurements of a CNT with different lengths, L. 12
Figure A.2 – I-V relationships for different CNT lengths – 2-probe measurement . 13
Figure A.3 – I-V relationships for different CNT lengths – 2-probe measurement (0 to 0,5 V) 13
Figure A.4 – I-V relationships for different CNT lengths – 4-probe measurement . 14
Figure A.5 – Resistance vs. CNT length . 14
Figure A.6 – I-V relationships of SWCNT . 15
Figure A.7 – Resistance vs. SWCNT length . 16
Figure A.8 – I-V relationships of SWCNT under the electron-beam exposure . 17
Figure A.9 – Breakdown characteristics of SWCNT . 18

Part 2-4: Carbon nanotube materials – Test methods for determination
of resistance of individual carbon nanotubes

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IEC TS 62607-2-4, which is a Technical Specification, has been prepared by IEC technical
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– 4 – IEC TS 62607-2-4:2020 © IEC 2020
The text of this Technical Specification is based on the following documents:
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113/492/DTS 113/509/RVDTS
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Key control characteristics, can be found on the IEC website.
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Carbon nanotubes (CNTs) are one-dimensional conductors that exhibit a rich variety of
low-dimensional electric transport phenomena. Ballistic conduction is the typical nano-enabled
characteristic that possesses the largest potential for industrial application. In the field of
nanoelectronics, for example, CNT-based interconnects are a promising alternative to conventional
Cu interconnects. However, even in the academic research society, the resistive characteristics
have not yet been systematically investigated. This is because these characteristics are very
sensitive to the protocol and the measurement conditions. Furthermore, since the individual CNT
reaches the nanometre dimension, the contact resistance has a larger relative impact on the
measurement. These bottlenecks impede not only the above-mentioned interconnect application but
also developments of

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