IEC TS 62607-8-1:2020

Nanomanufacturing - Key control characteristics - Part 8-1: Nano-enabled metal-oxide interfacial devices - Test method for defect states by thermally stimulated current

IEC TS 62607-8-1:2020 There are two types of thermally stimulated current (TSC) measurement methods, classified by the origin of the current. One is generated by the detrapping of charges. The other one is generated by depolarization. IEC TS 62607-8-1:2020 focuses on the former method, and specifies the measurement method to be developed for determining defect states of nano-enabled metal-oxide interfacial devices.
IEC TS 62607-8-1:2020 includes:
– outlines of the experimental procedures used to measure TSC,
– methods of interpretation of results and discussion of data analysis, and
– case studies.

General Information

• Status: Published
• Publication Date: 08-Apr-2020
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 07.030 - Physics. Chemistry
• ICS: 07.120 - Nanotechnologies
• ICS: 29.060.10 - Wires
• Technical Committee: TC 113 - Nanotechnology for electrotechnical products and systems
• Drafting Committee: WG 3 - TC 113/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 06-Mar-2020
• Completion Date: 09-Apr-2020

Standards Content (Sample)

IEC TS 62607-8-1 ®
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 8-1: Nano-enabled metal-oxide interfacial devices – Test method for defect
states by thermally stimulated current

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IEC TS 62607-8-1 ®
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –

Part 8-1: Nano-enabled metal-oxide interfacial devices – Test method for defect

states by thermally stimulated current

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.120; 07.030 ISBN 978-2-8322-7978-6

– 2 – IEC TS 62607-8-1:2020 © IEC 2020
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms, definitions, and abbreviated terms . 7
3.1 Terms and definitions . 7
3.2 Abbreviated terms . 8
4 Measurement of TSC . 8
4.1 General . 8
4.2 Sample preparation . 8
4.3 Experimental procedures . 8
5 Reporting data . 9
6 Data analysis / interpretation of results . 9
6.1 General . 9
6.2 Peak method [1] . 10
6.3 T –T method [2] [3] . 10
start stop
6.4 Initial rise method [4] . 10
Annex A (informative) Case study . 11
A.1 TSC measurement of Au/GaAs (reference sample) . 11
A.1.1 General . 11
A.1.2 Estimating activation energy of defect states by peak method. 14
A.2 TSC measurement of Ir/Ta O . 18
2 5
A.2.1 General . 18
A.2.2 Estimating activation energy of defect states by Peak method . 23
Annex B (informative) Possible methods to analyse TSC spectra . 26
B.1 Peak method . 26
B.2 T –T method . 26
start stop
B.3 Initial rise method . 27
Bibliography . 29

Figure 1 – Structure of TSC measurement device . 8
Figure 2 – Visualization of TSC measurement sequence . 9
Figure A.1 – Photos of (a) the Au electrode configuration on GaAs reference sample,
and (b) sample setting . 11
Figure A.2 – Structure of TSC measurement device . 12
Figure A.3 – TSC data comparison by samples . 13
Figure A.4 – TSC data comparison by heating rate . 14
Figure A.5 – Determination of TSC peak positions using the second derivative curves . 16
2 4
Figure A.6 – Arrhenius plots of (a) ln(T /β) vs. 1/T and (b) ln(T /β) vs. 1/T . 17
m m m m
Figure A.7 – TSC data comparison by samples . 19
Figure A.8 – TSC data comparison of Sample A by heating rate . 20
Figure A.9 – TSC data comparison of Sample B by heating rate . 20
Figure A.10 – TSC data comparison of Sample C by heating rate . 21

Figure A.11 – TSC data comparison by carrier injection method (Samples A, B and C) . 22
Figure A.12 – Samples A, B and C: Determination of TSC peak positions using the
second derivative curves . 23
Figure A.13 – Arrhenius plots for TA1, Sample A . 24
Figure B.1 – Peak method . 26
Figure B.2 – T –T method . 27
start stop
Figure B.3 – Determination of trap level energy through initial rise method . 28

Table 1 – TSC measurement sequence steps and parameters . 9
Table A.1 – TSC measurement sequence steps and parameters / case study . 13
Table A.2 – Activation energies of T1 to T6 for y = ln (T /β) . 17
m
Table A.3 – Activation energies of T1 to T6 for y = ln (T /β) . 17
m
Table A.4 – TSC measurement sequence steps and parameters / case study (2) . 18
Table A.5 – Conditions of Ta O sputtering deposition . 19
2 5
Table A.6 – Activation energies of Samples A, B and C . 24

– 4 – IEC TS 62607-8-1:2020 © IEC 2020
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 8-1: Nano-enabled metal-oxide interfacial devices –
Test method for defect states by thermally stimulated current

FOREWORD
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IEC TS 62607-8-1, which is a Technical Specification, has been prepared by IEC technical
committee 113: Nanotechnology for electrotechnical products and systems.

The text of this Technical Specification is based on the following documents:
DTS Report on voting
113/493/DTS 113/510/RVDTS
Full information on the voting for the approval of this Technical Specification can be found in
...