Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer

IEC 62047-34:2019 (E) describes test conditions and test methods of electric character, static performances and thermal performances for MEMS pressure-sensitive devices. This document applies to test for both open and closed loop piezoresistive MEMS pressure devices on wafer.

General Information

Status
Published
Publication Date
04-Apr-2019
Current Stage
PPUB - Publication issued
Completion Date
05-Apr-2019
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IEC 62047-34
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on
wafer
IEC 62047-34:2019-04(en)
---------------------- Page: 1 ----------------------
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---------------------- Page: 2 ----------------------
IEC 62047-34
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on
wafer
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99; 31.140 ISBN 978-2-8322-6719-6

Warning! Make sure that you obtained this publication from an authorized distributor.

® Registered trademark of the International Electrotechnical Commission
---------------------- Page: 3 ----------------------
– 2 – IEC 62047-34:2019 © IEC 2019
CONTENTS

FOREWORD ........................................................................................................................... 3

1 Scope .............................................................................................................................. 5

2 Normative references ...................................................................................................... 5

3 Terms and definitions ...................................................................................................... 5

4 Test conditions ................................................................................................................ 6

4.1 Atmospheric conditions ........................................................................................... 6

4.2 Electromagnetic conditions ..................................................................................... 6

4.3 Vibration conditions ................................................................................................ 6

4.4 Test system ............................................................................................................ 6

5 General provisions........................................................................................................... 7

5.1 Certificate documents ............................................................................................. 7

5.2 Placement and preheating time ............................................................................... 7

5.3 Connection ............................................................................................................. 7

6 Test items and methods................................................................................................... 7

6.1 Test preparation...................................................................................................... 7

6.2 Resistance .............................................................................................................. 7

6.2.1 Purpose ........................................................................................................... 7

6.2.2 Test methods ................................................................................................... 7

6.3 Static performances ................................................................................................ 8

6.3.1 Purpose ........................................................................................................... 8

6.3.2 Test items ........................................................................................................ 8

6.3.3 Test method .................................................................................................... 9

6.4 Thermal performances .......................................................................................... 13

6.4.1 Purpose ......................................................................................................... 13

6.4.2 Test items ...................................................................................................... 14

6.4.3 Test method .................................................................................................. 14

Bibliography .......................................................................................................................... 16

Figure 1 – Closed loop bridge ................................................................................................. 8

Figure 2 – Open loop bridge ................................................................................................... 8

Figure 3 – Five-point sampling ................................................................................................ 9

---------------------- Page: 4 ----------------------
IEC 62047-34:2019 © IEC 2019 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 34: Test methods for MEMS piezoresistive
pressure-sensitive device on wafer
FOREWORD

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International Standard IEC 62047-34 has been prepared by subcommittee 47F: Micro-

electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/328/FDIS 47F/333/RVD

Full information on the voting for the approval of this International Standard can be found in

the report on voting indicated in the above table.

This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

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– 4 – IEC 62047-34:2019 © IEC 2019

A list of all parts in the IEC 62047 series, published under the general title Semiconductor

devices – Micro-electromechanical devices, can be found on the IEC website.

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---------------------- Page: 6 ----------------------
IEC 62047-34:2019 © IEC 2019 – 5 –
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 34: Test methods for MEMS piezoresistive
pressure-sensitive device on wafer
1 Scope

This part of IEC 62047 describes test conditions and test methods of electric character, static

performances and thermal performances for MEMS pressure-sensitive devices. This

document applies to test for both open and closed loop piezoresistive MEMS pressure

devices on wafer.
2 Normative references

The following documents are referred to in the text in such a way that some or all of their

content constitutes requirements of this document. For dated references, only the edition

cited applies. For undated references, the latest edition of the referenced document (including

any amendments) applies.

IEC 61193-2, Quality assessment systems – Part 2: Selection and use of sampling plans for

inspection of electronic components and packages

IEC 60747-14-3, Semiconductor devices – Part 14-3: Semiconductor sensors – Pressure

sensors
3 Terms and definitions

For the purposes of this document, the terms and definitions given in IEC 60747-14-3 and the

following apply.

ISO and IEC maintain terminological databases for use in standardization at the following

addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
piezoresistive pressure-sensitive device

device that transforms pressure signal into electric signal due to piezoresistive effect, usually

including cavity-membrane structure on silicon substrate and Wheatstone bridge in the

membrane fabricated by MEMS technology
[SOURCE: IEC 62047-33: –, 3.1]
3.2
closed loop piezoresistive pressure-sensitive device

piezoresistive pressure-sensitive device that employs closed loop Wheatstone bridge for

signal detection
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– 6 – IEC 62047-34:2019 © IEC 2019
3.3
open loop piezoresistive pressure-sensitive device

piezoresistive pressure-sensitive device that employs open loop Wheatstone bridge for signal

detection
3.4
output under normal pressure
output of the pressure-sensitive device under the standard reference atmosphere
pressure(101,3 kPa)
3.5
zero output

output of the pressure-sensitive device when the pressure difference between both sides of

the membrane structure is zero
4 Test conditions
4.1 Atmospheric conditions

The measurement of characteristics shall be carried out under the following atmospheric

conditions unless otherwise specified.
a) Standard atmospheric conditions
Temperature range: 15 °C to 35 °C;
Relative humidity range: 20 % to 80 %;
Atmospheric pressure range: 86 kPa to 106 kPa.
b) Standard reference atmospheric conditions
Temperature: 20 °C;
Relative humidity: 65 %;
Atmospheric pressure: 101,3 kPa.

The standard reference atmospheric conditions are corrected values derived from testing

values under any other atmospheric conditions. In most circumstances,
...

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