SIST EN 60749-26:2014
(Main)Semiconductor devices - Mechanical and climatic test methods -- Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
Semiconductor devices - Mechanical and climatic test methods -- Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
EN IEC 60749-26 establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose (objective) of this standard is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. The HBM and MM test methods produce similar but not identical results; unless otherwise specified, this test method is the one selected.
Halbleiterbauelemente – Mechanische und klimatische Prüfverfahren -- Teil 26: Prüfung der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Human Body Model (HBM)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques -- Partie 26: Essai de sensibilité aux décharges électrostatiques (DES) - Modèle du corps humain (HBM)
La CEI 60749-26:2013 établit une procédure pour les essais, l'évaluation et la classification des composants et des microcircuits en fonction de leur susceptibilité (sensibilité) aux dommages ou de leur dégradation suite à leur exposition à des décharges électrostatiques (DES) sur un modèle de corps humain (HBM) défini. Le but (objectif) de cette norme est de déterminer une méthode d'essai permettant de reproduire les défaillances du HBM et de fournir des résultats d'essais de DES de HBM fiables et reproductibles d'un appareil d'essai à un autre, sans tenir compte du type de composant. Des données reproductibles autoriseront des classifications et des comparaisons précises des niveaux de sensibilité de DES de HBM. Les essais de DES des dispositifs à semiconducteurs sont choisis entre la présente méthode d'essai, celle du modèle de machine (MM) (voir CEI 60749-27) ou toute autre méthode d'essai de la série CEI 60749. Les méthodes d'essai HBM et MM produisent des résultats similaires mais non identiques; sauf indication contraire, la présente méthode d'essai est celle qui prévaut. Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente:
a) les descriptions de l'oscilloscope et des transducteurs de courant ont été améliorées et mises à jour;
b) le schéma de circuit et la description du HBM ont été améliorés;
c) la description de la qualification et de la vérification du matériel d'essai de contrainte a été entièrement réécrite;
d) la qualification et la vérification des cartes de montage d'essai ont été révisées;
e) une nouvelle section concernant la détermination de l'oscillation de la forme d'onde de courant a été ajoutée;
f) certaines variantes de combinaisons de broches ont été incluses;
g) autorisation de contrainte pour les broches n'assurant pas l'alimentation jusqu'à un nombre limité de groupes de broches d'alimentation (broches associées n'assurant pas l'alimentation) et autorisation de limiter les contraintes entre broches n'assurant pas l'alimentation et broches n'assurant pas l'alimentation (c'est-à-dire, E/S vers E/S) à un nombre fini de 2 paires de broches (paires de broches couplées n'assurant pas l'alimentation);
- h) autorisation explicite de contrainte de HBM utilisant des appareils d'essai de HBM à 2 broches pour puce seulement pour des groupes d'alimentations court-circuitées.
Polprevodniški elementi - Mehanske in klimatske preskusne metode - 26. del: Preskušanje občutljivosti na elektrostatične izpraznitve (ESD) - Model človeškega telesa (HBM)
EN IEC 60749-26 določa standardni postopek za preskušanje, ocenjevanje in razvrščanje sestavnih delov in mikrovezij glede na občutljivost na poškodbe in degradacijo, ki so posledica izpostavljenosti določenim elektrostatičnim izpraznitvam (ESD) modela človeškega telesa (HBM). Namen (cilj) tega standarda je določiti preskusno metodo, ki bo ponovila napake modela človeškega telesa in zagotovila zanesljive in ponovljive preskusne rezultate elektrostatičnih izpraznitev (ESD) modela človeškega telesa (HBM) pri vseh preskuševalcih ne glede na vrsto sestavnega dela. Ponovljivi podatki bodo omogočili natančne opredelitve in primerjave ravni občutljivosti na elektrostatične izpraznitve (ESD) modela človeškega telesa (HBM). Preskus elektrostatične izpraznitve elementov se izbere iz te preskusne metode, preskusne metode modela stroja (MM; glej standard IEC 60749-27) ali drugih testnih metod iz serije standardov IEC 60749. Preskusni metodi HBM in MM dajeta podobne, toda ne enakih rezultatov; če ni navedeno drugače, je izbrana ta preskusna metoda.
General Information
Relations
Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN 60749-26:2014
01-julij-2014
1DGRPHãþD
SIST EN 60749-26:2007
3ROSUHYRGQLãNLHOHPHQWL0HKDQVNHLQNOLPDWVNHSUHVNXVQHPHWRGHGHO
3UHVNXãDQMHREþXWOMLYRVWLQDHOHNWURVWDWLþQHL]SUD]QLWYH (6' 0RGHOþORYHãNHJD
WHOHVD +%0
Semiconductor devices - Mechanical and climatic test methods -- Part 26: Electrostatic
discharge (ESD) sensitivity testing - Human body model (HBM)
Halbleiterbauelemente – Mechanische und klimatische Prüfverfahren -- Teil 26: Prüfung
der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Human Body Model
(HBM)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques -- Partie
26: Essai de sensibilité aux décharges électrostatiques (DES) - Modèle du corps humain
(HBM)
Ta slovenski standard je istoveten z: EN 60749-26:2014
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 60749-26:2014 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
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SIST EN 60749-26:2014
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SIST EN 60749-26:2014
EUROPEAN STANDARD EN 60749-26
NORME EUROPÉENNE
EUROPÄISCHE NORM
May 2014
ICS 31.080.01 Supersedes EN 60749-26:2006
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 26: Electrostatic discharge (ESD) sensitivity testing -
Human body model (HBM)
(IEC 60749-26:2013)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 26: Essai de sensibilité Prüfverfahren - Teil 26: Prüfung der Empfindlichkeit gegen
aux décharges électrostatiques (DES) - Modèle du corps elektrostatische Entladungen (ESD) - Human Body Model
humain (HBM) (HBM)
(CEI 60749-26:2013) (IEC 60749-26:2013)
This European Standard was approved by CENELEC on 2014-04-14. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2014 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 60749-26:2014 E
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SIST EN 60749-26:2014
EN 60749-26:2014 - 2 -
Foreword
This document (EN 60749-26:2014) consists of the text of IEC 60749-26:2013 prepared by IEC/TC 47
"Semiconductor devices", in collaboration with Technical Committee 101.
The following dates are fixed:
(dop) 2015-04-14
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2017-04-14
• latest date by which the national
standards conflicting with the
document have to be withdrawn
This document supersedes EN 60749-26:2006.
EN 60749-26:2014 includes the following significant technical changes with respect to
EN 60749-26:2006:
a) descriptions of oscilloscope and current transducers have been refined and updated;
b) the HBM circuit schematic and description have been improved;
c) the description of stress test equipment qualification and verification has been completely re-
written;
d) qualification and verification of test fixture boards has been revised;
e) a new section on the determination of ringing in the current waveform has been added;
f) some alternate pin combinations have been included;
g) allowance for non-supply pins to stress to a limited number of supply pin groups (associated non-
supply pins) and allowance for non-supply to non-supply (i.e., I/O to I/O) stress to be limited to a
finite number of 2 pin pairs (coupled non-supply pin pairs);
h) explicit allowance for HBM stress using 2 pin HBM testers for die only shorted supply groups.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 60749-26:2013 was approved by CENELEC as a European
Standard without any modification.
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SIST EN 60749-26:2014
- 3 - EN 60749-26:2014
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu
Publication Year Title EN/HD Year
IEC 60749-27 - Semiconductor devices - Mechanical and EN 60749-27 -
climatic test methods -
Part 27: Electrostatic discharge (ESD)
sensitivity testing - Machine model (MM)
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SIST EN 60749-26:2014
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SIST EN 60749-26:2014
IEC 60749-26
®
Edition 3.0 2013-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Mechanical and climatic test methods –
Part 26: Electrostatic discharge (ESD) sensitivity testing – Human body model
(HBM)
Dispositifs à semiconducteurs – Méthodes d'essais mécaniques et climatiques –
Partie 26: Essai de sensibilité aux décharges électrostatiques (DES) – Modèle du
corps humain (HBM)
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX X
ICS 31.080.01 ISBN 978-2-83220-746-8
Warning! Make sure that you obtained this publication from an authorized distributor.
Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
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SIST EN 60749-26:2014
– 2 – 60749-26 © IEC:2013
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Apparatus and required equipment . 9
4.1 Waveform verification equipment . 9
4.2 Oscilloscope . 10
4.3 Additional requirements for digital oscilloscopes . 10
4.4 Current transducer (inductive current probe) . 10
4.5 Evaluation loads . 10
4.6 Human body model simulator . 10
4.7 HBM test equipment parasitic properties . 11
5 Stress test equipment qualification and routine verification . 11
5.1 Overview of required HBM tester evaluations . 11
5.2 Measurement procedures . 11
5.2.1 Reference pin pair determination . 11
5.2.2 Waveform capture with current probe . 12
5.2.3 Determination of waveform parameters . 12
5.2.4 High voltage discharge path test . 15
5.3 HBM tester qualification . 15
5.3.1 HBM ESD tester qualification requirements . 15
5.3.2 HBM tester qualification procedure . 15
5.4 Test fixture board qualification for socketed testers . 16
5.5 Routine waveform check requirements . 17
5.5.1 Standard routine waveform check description . 17
5.5.2 Waveform check frequency . 17
5.5.3 Alternate routine waveform capture procedure . 18
5.6 High voltage discharge path check . 18
5.6.1 Relay testers . 18
5.6.2 Non-relay testers . 18
5.7 Tester waveform records . 18
5.7.1 Tester and test fixture board qualification records . 18
5.7.2 Periodic waveform check records . 18
5.8 Safety. 19
5.8.1 Initial set-up . 19
5.8.2 Training . 19
5.8.3 Personnel safety . 19
6 Classification procedure . 19
6.1 Devices for classification . 19
6.2 Parametric and functional testing . 19
6.3 Device stressing . 19
6.4 Pin categorization . 20
6.4.1 General . 20
6.4.2 No connect pins . 20
6.4.3 Supply pins . 20
6.4.4 Non–supply pins . 21
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SIST EN 60749-26:2014
60749-26 © IEC:2013 – 3 –
6.5 Pin groupings . 21
6.5.1 Supply pin groups . 21
6.5.2 Shorted non-supply pin groups . 22
6.6 Pin stress combinations . 22
6.6.1 Pin stress combination categorisation . 22
6.6.2 Non-supply and supply to supply combinations (1, 2, … N) . 24
6.6.3 Non-supply to non-supply combinations . 25
6.7 Testing after stressing . 26
7 Failure criteria . 26
8 Component classification . 26
Annex A (informative) HBM test method flow chart . 27
Annex B (informative) HBM test equipment parasitic properties . 30
Annex C (informative) Example of testing a product using Table 2, Table 3, or Table 2
with a two-pin HBM tester . 34
Annex D (informative) Examples of coupled non-supply pin pairs . 40
Figure 1 – Simplified HBM simulator circuit with loads . 11
Figure 2 – Current waveform through shorting wires . 13
Figure 3 – Current waveform through a 500 Ω resistor . 14
Figure 4 – Peak current short circuit ringing waveform . 15
Figure B.1 – Diagram of trailing pulse measurement setup. 30
Figure B.2 – Positive stress at 4 000 V . 31
Figure B.3 – Negative stress at 4 000 V . 31
Figure B.4 – Illustration of measuring voltage before HBM pulse with a Zener diode or
a device . 32
Figure B.5 – Example of voltage rise before the HBM current pulse across a 9,4 V
Zener diode . 32
Figure C.1 – Example to demonstrate the idea of the partitioned test . 35
Table 1 – Waveform specification . 17
Table 2 – Preferred pin combinations sets . 23
Table 3 – Alternative pin combinations sets . 24
Table 4 – HBM ESD component classification levels . 26
Table C.1 – Product testing in accordance with Table 2 . 36
Table C.2 – Product testing in accordance with Table 3 . 37
Table C.3 – Alternative product testing in accordance with Table 2 . 38
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SIST EN 60749-26:2014
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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 26: Electrostatic discharge (ESD) sensitivity testing –
Human body model (HBM)
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
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6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
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expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-26 has been prepared by IEC technical committee 47:
Semiconductor devices in collaboration with technical committee 101.
This third edition cancels and replaces the second edition published in 2006. This edition
constitutes a technical revision. This standard is based upon ANSI/ESDA/JEDEC JS-001-
2010. It is used with permission of the copyright holders, ESD Association and JEDEC Solid
state Technology Association.
NOTE ANSI/ESDA/JEDEC JS-001 resulted from the merging of JESD22-A114F and ANSI/ESD STM5.1.
This edition includes the following significant technical changes with respect to the previous
edition:
a) descriptions of oscilloscope and current transducers have been refined and updated;
b) the HBM circuit schematic and description have been improved;
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SIST EN 60749-26:2014
60749-26 © IEC:2013 – 5 –
c) the description of stress test equipment qualification and verification has been completely
re-written;
d) qualification and verification of test fixture boards has been revised;
e) a new section on the determination of ringing in the current waveform has been added;
f) some alternate pin combinations have been included;
g) allowance for non-supply pins to stress to a limited number of supply pin groups
(associated non-supply pins) and allowance for non-supply to non-supply (i.e., I/O to I/O)
stress to be limited to a finite number of 2 pin pairs (coupled non-supply pin pairs);
h) explicit allowance for HBM stress using 2 pin HBM testers for die only shorted supply
groups.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2160/FDIS 47/2167/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices – Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
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SIST EN 60749-26:2014
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SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 26: Electrostatic discharge (ESD) sensitivity testing –
Human body model (HBM)
1 Scope
This standard establishes the procedure for testing, evaluating, and classifying components
and microcircuits according to their susceptibility (sensitivity) to damage or degradation by
exposure to a defined human body model (HBM) electrostatic discharge (ESD).
The purpose (objective) of this standard is to establish a test method that will replicate HBM
failures and provide reliable, repeatable HBM ESD test results from tester to tester,
regardless of component type. Repeatable data will allow accurate classifications and
comparisons of HBM ESD sensitivity levels.
ESD testing of semiconductor devices is selected from this test method, the machine model
(MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series.
The HBM and MM test methods produce similar but not identical results; unless otherwise
specified, this test method is the one selected.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60749-27, Semiconductor devices – Mechanical and climatic test methods – Part 27:
Electrostatic discharge (ESD) sensitivity testing – Machine model (MM)
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
associated non-supply pin
non-supply pin (typically an I/O pin) associated with a supply pin group
Note 1 to entry: A non-supply pin is considered to be associated with a supply pin group if either:
a) The current from the supply pin group (i.e., VDDIO) is required for the function of the electrical circuit(s) (I/O
driver) that connect (high/low impedance) to that non-supply pin.
b) A parasitic path exists between non-supply and supply pin group (e.g., open-drain type non-supply pin to a
VCC supply pin group that connects to a nearby N-well guard ring).
3.2
component
item such as a resistor, diode, transistor, integrated circuit or hybrid circuit
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SIST EN 60749-26:2014
60749-26 © IEC:2013 – 7 –
3.3
component failure
condition in which a tested component does not meet one or more specified static or dynamic
data sheet parameters
3.4
coupled non-supply pin pair
two pins that have an intended direct current path (such as a pass gate or resistors, such as
differential amplifier inputs, or low voltage differential signaling (LVDS) pins), including
analogue and digital differential pairs and other special function pairs (e.g., D+/D-,
XTALin/XTALout, RFin/RFout, TxP/TxN, RxP/RxN, CCP_DP/CCN_DN etc.)
3.5
data sheet parameters
static and dynamic component performance data supplied by the component manufacturer or
supplier
3.6
withstand voltage
highest voltage level that does not cause device failure
Note 1 to entry: The device passes all tested lower voltages (see failure Window).
3.7
failure window
intermediate range of stress voltages that can induce failure in a particular device type, when
the device type can pass some stress voltages both higher and lower than this range
Note 1 to entry: A component with a failure window may pass a 500 V test, fail a 1 000 V test and pass 2 000 V
test. The withstand voltage of this device is 500 V.
3.8
human body model electrostatic discharge
HBM ESD
ESD event meeting the waveform criteria specified in this standard, approximating the
discharge from the fingertip of a typical human being to a grounded device
3.9
HBM ESD tester
HBM simulator
equipment that applies an HBM ESD to a component
3.10
I
ps
peak current value determined by the current at time t on the linear extrapolation of the
max
exponential current decay curve, based on the current waveform data over a 40 nanosecond
period beginning at t
max
SEE: Figure 2 a).
3.11
I
psmax
highest current value measured including the overshoot or ringing components due to internal
test simulator RLC parasitics
SEE: Figure 2 a).
3.12
no connect pin
package interconnection that is not electrically connected to a die
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SIST EN 60749-26:2014
– 8 – 60749-26 © IEC:2013
EXAMPLE: Pin, bump, ball interconnection.
Note 1 to entry: There are some pins which are labelled as no connect, which are actually connected to the die
and should not be classified as a no connect pin.
3.13
non-socketed tester
HBM simulator that makes contact to the device under test (DUT), pins (or balls, lands, bumps
or die pads) with test probes rather than placing the DUT in a socket
3.14
non-supply pins
all pins not categorized as supply pins or no connects
Note 1 to entry: This includes pins such as input, output, offset adjusts, compensation, clocks, controls, address,
data, Vref pins and VPP pins on EPROM memory. Most non-supply pins transmit or receive information such as
digital or analog signals, timing, clock signals, and voltage or current reference levels.
3.15
package plane
low impedance metal layer built into an IC package connecting a group of bumps or pins
(typically power or ground)
Note 1 to entry: There may be multiple package planes (sometimes referred to as islands) for each power and
ground group.
3.16
pre-pulse voltage
voltage occurring at the device under test (DUT) just prior to the generation of the HBM
current pulse
SEE: Clause C.2.
3.17
pulse generation circuit
dual polarity pulse source circuit network that produces a human body discharge current
waveform
Note 1 to entry: The circuit network includes a pulse generator with its test equipment internal path up to the
contact pad of the test fixture. This circuit is also referred to as dual polarity pulse source.
3.18
ringing
high frequency oscillation superimposed on a waveform
3.19
shorted non-supply pin
any non-supply pin (typically an I/O pin) that is metallically connected (typically < 3 Ω) on the
chip or within the package to another non-supply pin (or set of non-supply pins)
3.20
spurious current
...
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