SIST EN 62416:2010

Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010)

This standard describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

Halbleiterbauelemente - Hot-Carrier-Prüfverfahren für MOS-Transistoren (IEC 62416:2010)

Dispositifs à semi-conducteurs - Essai de porteur chaud sur les transistors MOS (CEI 62416:2010)

La CEI 62416:2010 décrit l'essai de porteur chaud au niveau de la plaquette sur les transistors NMOS et PMOS. Cet essai est destiné à déterminer si les transistors individuels sont conformes à la durée de vie exigée du porteur chaud dans un processus (C)MOS donné.",PE

Polprevodniški elementi - Preskušanje z vročimi nosilci pri tranzistorjih MOS (IEC 62416:2010)

Ta standard opisuje preskušanje z vročimi nosilci na ploščici pri tranzistorjih NMOS in PMOS. Preskus je namenjen ugotavljanju, ali posamezni tranzistorji v določenem (C)MOS procesu ustrezajo zahtevani življenjski dobi za vroče nosilce.

General Information

• Status: Published
• Publication Date: 12-Jul-2010
• ICS: 31.080.30 - Transistors
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 28-Jun-2010
• Due Date: 02-Sep-2010
• Completion Date: 13-Jul-2010
• Ref Project: EN 62416:2010 - Semiconductor devices - Hot carrier test on MOS transistors

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN 62416:2010
01-september-2010
3ROSUHYRGQLãNLHOHPHQWL3UHVNXãDQMH]YURþLPLQRVLOFLSULWUDQ]LVWRUMLK026,(&

Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010)
Halbleiterbauelemente - Hot-Carrier-Prüfverfahren für MOS-Transistoren (IEC
62416:2010)
Dispositifs à semi-conducteurs - Essai de porteur chaud sur les transistors MOS (CEI
62416:2010)
Ta slovenski standard je istoveten z: EN 62416:2010
ICS:
31.080.30 Tranzistorji Transistors
SIST EN 62416:2010 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62416:2010

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SIST EN 62416:2010

EUROPEAN STANDARD
EN 62416

NORME EUROPÉENNE
June 2010
EUROPÄISCHE NORM

ICS 31.080


English version


Semiconductor devices -
Hot carrier test on MOS transistors
(IEC 62416:2010)


Dispositifs à semi-conducteurs -  Halbleiterbauelemente -
Essai de porteur chaud sur les transistors Hot-Carrier-Prüfverfahren für MOS-
MOS Transistoren
(CEI 62416:2010) (IEC 62416:2010)




This European Standard was approved by CENELEC on 2010-06-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels


© 2010 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62416:2010 E

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SIST EN 62416:2010
EN 62416:2010 - 2 -
Foreword
The text of document 47/2041/FDIS, future edition 1 of IEC 62416, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62416 on 2010-06-01.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
(dop) 2011-03-01
national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2013-06-01
with the EN have to be withdrawn
__________
Endorsement notice
The text of the International Standard IEC 62416:2010 was approved by CENELEC as a European
Standard without any modification.
__________

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SIST EN 62416:2010
IEC 62416
®
Edition 1.0 2010-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE


Semiconductor devices – Hot carrier test on MOS transistors

Dispositifs à semiconducteurs – Essai de porteur chaud sur les transistors MOS


INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
K
CODE PRIX
ICS 31.080 ISBN 978-2-88910-695-0
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 62416:2010
– 2 – 62416 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope.5
2 Abbreviations and letter symbols .5
3 Test structures .6
4 Stress time .6
5 Stress conditions .6
6 Sample size.7
7 Temperature.7
8 Failure criteria .7
9 Lifetime estimation method.7
9.1 DC acceleration models .7
9.1.1 General .7
9.1.2 Method 1: extrapolation vs. drain currrent.8
9.1.3 Method 2: extrapolation vs. drain bias and channel length .8
9.2 AC estimation model .9
10 Lifetime requirements .9
11 Reporting .9
Bibliography.10

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SIST EN 62416:2010
62416 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
HOT CARRIER TEST ON MOS TRANSISTORS


FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
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3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62416 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2041/FDIS 47/2048/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

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SIST EN 62416:2010
– 4 – 62416 © IEC:2010
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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SIST EN 62416:2010
62416 © IEC:2010 – 5 –
SEMICOND
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