IEC 62276:2016

Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

IEC 62276:2016 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition:
- Corrections of Euler angle indications in Table 1 and axis directions in Figure 3.
- Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition.
- Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality.

Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques de surface (OAS) - Spécifications et méthodes de mesure

L'IEC 62276:2016 s'applique à la fabrication de tranches monocristallines de quartz synthétique, de niobate de lithium (LN), de tantalate de lithium (LT), de tétraborate de lithium (LBO) et de silicate de gallium et de lanthane (LGS) destinées à être utilisées comme substrats dans la fabrication de résonateurs et de filtres à ondes acoustiques de surface (OAS).
La présente édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente:
- Corrections des indications de l'angle d'Euler au Tableau 1 et des directions des axes à la Figure 3.
- La définition de "cristal jumeau" n'était pas expliquée de manière suffisamment claire en 3.3.3. Elle a été révisée par une définition plus détaillée.
- Le nombre maximal de canaux de gravure dans un germe de tranche de quartz qui ne traverse pas de la surface avant à la surface arrière est déterminé pour trois classes en 4.2.13 a). Les utilisateurs utilisent des parties de germes de tranches de quartz pour les dispositifs. Ces tranches de quartz nécessitent moins de canaux de gravure dans un germe pour réduire les défauts dans les dispositifs. La classification des canaux de gravure dans un germe peut nécessiter une augmentation de la qualité des tranches de quartz.

General Information

• Status: Published
• Publication Date: 23-Oct-2016
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 29.060.10 - Wires
• ICS: 31.140 - Piezoelectric devices
• Technical Committee: TC 49 - Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection
• Drafting Committee: WG 5 - TC 49/WG 5
• Current Stage: PPUB - Publication issued
• Start Date: 31-Dec-2016
• Completion Date: 24-Oct-2016

Relations

• Revises: IEC 62276:2012 - Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 62276 ®
Edition 3.0 2016-10
INTERNATIONAL
STANDARD
Single crystal wafers for surface acoustic wave (SAW) device applications –
Specifications and measuring methods

All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
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IEC 62276 ®
Edition 3.0 2016-10
INTERNATIONAL
STANDARD
Single crystal wafers for surface acoustic wave (SAW) device applications –

Specifications and measuring methods

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.140 ISBN 978-2-8322-3691-8

– 2 – IEC 62276:2016  IEC 2016
CONTENTS
FOREWORD . 5
INTRODUCTION . 7
1 Scope . 8
2 Normative references . 8
3 Terms and definitions . 8
3.1 Single crystals for SAW wafer . 8
3.2 Terms and definitions related to LN and LT crystals . 9
3.3 Terms and definitions related to all crystals . 9
3.4 Flatness . 10
3.5 Definitions of appearance defects . 12
3.6 Other terms and definitions . 13
4 Requirements . 14
4.1 Material specification . 14
4.1.1 Synthetic quartz crystal . 14
4.1.2 LN . 15
4.1.3 LT . 15
4.1.4 LBO, LGS . 15
4.2 Wafer specifications . 15
4.2.1 General . 15
4.2.2 Diameters and tolerances . 15
4.2.3 Thickness and tolerance . 15
4.2.4 Orientation flat . 15
4.2.5 Secondary flat . 16
4.2.6 Back surface roughness . 16
4.2.7 Warp . 16
4.2.8 TV5 or TTV . 16
4.2.9 Front (propagation) surface finish . 17
4.2.10 Front surface defects . 17
4.2.11 Surface orientation tolerance . 18
4.2.12 Inclusions . 18
4.2.13 Etch channel number and position of seed for quartz wafer . 18
4.2.14 Bevel . 18
4.2.15 Curie temperature and tolerance. 18
4.2.16 Lattice constant . 18
4.2.17 Bulk resistivity (conductivity) for reduced LN and LT . 19
5 Sampling plan . 19
5.1 General . 19
5.2 Sampling. 19
5.3 Sampling frequency . 19
5.4 Inspection of whole population . 19
6 Test methods . 19
6.1 Diameter . 19
6.2 Thickness . 20
6.3 Dimension of OF . 20
6.4 Orientation of OF . 20
6.5 TV5 . 20

6.6 Warp . 20
6.7 TTV . 20
6.8 Front surface defects . 20
6.9 Inclusions . 20
6.10 Back surface roughness . 20
6.11 Orientation . 20
6.12 Curie temperature . 20
6.13 Lattice constant . 20
6.14 Bulk resistivity . 21
7 Identification, labelling, packaging, delivery condition . 21
7.1 Packaging . 21
7.2 Labelling and identification . 21
7.3 Delivery condition . 21
8 Measurement of Curie temperature . 21
8.1 General . 21
8.2 DTA method . 21
8.3 Dielectric constant method . 22
9 Measurement of lattice constant (Bond method) . 23
10 Measurement of face angle by X-ray. 24
10.1 Measurement principle . 24
10.2 Measurement method . 25
10.3 Measuring surface orientation of wafer. 25
10.4 Measuring OF flat orientation . 25
10.5 Typical wafer orientations and reference planes. 25
11 Measurement of bulk resistivity . 26
11.1 Resistance measurement of a wafer . 26
11.2 Electrode . 27
11.3 Bulk resistivity . 27
12 Visual inspections – Front surface inspection method . 27
Annex A (normative) Expression using Euler angle description for piezoelectric single
crystals . 29
A.1 Wafer orientation using Euler angle description . 29
Annex B (informative) Manufacturing process for SAW wafers . 32
B.1 Crystal growth methods . 32
B.1.1 Czochralski growth method . 32
B.1.2 Vertical Bridgman method . 34
B.2 Standard mechanical wafer manufacturing . 35
B.2.1 Process flow-chart . 35
B.2.2 Cutting both ends and cylindrical grinding . 36
B.2.3 Marking orientation . 37
B.2.4 Slicing . 37
B.2.5 Double-sided lapping . 37
B.2.6 Bevelling (edge rounding) . 37
B.2.7 Mirror polishing . 37
Bibliography . 38

Figure 1 – Wafer sketch and measurement points for TV5 determination . 10
Figure 2 – Schemati
...

IEC 62276 ®
Edition 3.0 2016-10
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Single crystal wafers for surface acoustic wave (SAW) device applications –
Specifications and measuring methods

Tranches monocristallines pour applications utilisant des dispositifs à ondes
acoustiques de surface (OAS) – Spécifications et méthodes de mesure
All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC
copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or
your local IEC member National Committee for further information.

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About the IEC
The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes
International Standards for all electrical, electronic and related technologies.

About IEC publications
The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
latest edition, a corrigenda or an amendment might have been published.

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Technical Specifications, Technical Reports and other English and French, with equivalent terms in 16 additional
documents. Available for PC, Mac OS, Android Tablets and languages. Also known as the International Electrotechnical
iPad. Vocabulary (IEV) online.

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The advanced search enables to find IEC publications by a 67 000 electrotechnical terminology entries in English and
variety of criteria (reference number, text, technical French extracted from the Terms and Definitions clause of
committee,…). It also gives information on projects, replaced IEC publications issued since 2002. Some entries have been
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IEC 62276 ®
Edition 3.0 2016-10
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Single crystal wafers for surface acoustic wave (SAW) device applications –

Specifications and measuring methods

Tranches monocristallines pour applications utilisant des dispositifs à ondes

acoustiques de surface (OAS) – Spécifications et méthodes de mesure

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.140 ISBN 978-2-8322-5271-00

– 2 – IEC 62276:2016 © IEC 2016
CONTENTS
CONTENTS . 2
FOREWORD . 5
INTRODUCTION . 7
1 Scope . 8
2 Normative references . 8
3 Terms and definitions . 8
3.1 Single crystals for SAW wafer . 8
3.2 Terms and definitions related to LN and LT crystals . 9
3.3 Terms and definitions related to all crystals . 9
3.4 Flatness . 10
3.5 Definitions of appearance defects . 12
3.6 Other terms and definitions . 13
4 Requirements . 14
4.1 Material specification . 14
4.1.1 Synthetic quartz crystal . 14
4.1.2 LN . 15
4.1.3 LT . 15
4.1.4 LBO, LGS . 15
4.2 Wafer specifications . 15
4.2.1 General . 15
4.2.2 Diameters and tolerances . 15
4.2.3 Thickness and tolerance . 15
4.2.4 Orientation flat . 15
4.2.5 Secondary flat . 16
4.2.6 Back surface roughness . 16
4.2.7 Warp . 16
4.2.8 TV5 or TTV . 16
4.2.9 Front (propagation) surface finish . 17
4.2.10 Front surface defects . 17
4.2.11 Surface orientation tolerance . 18
4.2.12 Inclusions . 18
4.2.13 Etch channel number and position of seed for quartz wafer . 18
4.2.14 Bevel . 18
4.2.15 Curie temperature and tolerance. 18
4.2.16 Lattice constant . 18
4.2.17 Bulk resistivity (conductivity) for reduced LN and LT . 19
5 Sampling plan . 19
5.1 General . 19
5.2 Sampling. 19
5.3 Sampling frequency . 19
5.4 Inspection of whole population . 19
6 Test methods . 19
6.1 Diameter . 19
6.2 Thickness . 20
6.3 Dimension of OF . 20

6.4 Orientation of OF . 20
6.5 TV5 . 20
6.6 Warp . 20
6.7 TTV . 20
6.8 Front surface defects . 20
6.9 Inclusions . 20
6.10 Back surface roughness . 20
6.11 Orientation . 20
6.12 Curie temperature . 20
6.13 Lattice constant . 20
6.14 Bulk resistivity . 21
7 Identification, labelling, packaging, delivery condition . 21
7.1 Packaging . 21
7.2 Labelling and identification . 21
7.3 Delivery condition . 21
8 Measurement of Curie temperature . 21
8.1 General . 21
8.2 DTA method . 21
8.3 Dielectric constant method . 22
9 Measurement of lattice constant (Bond method) .
...