Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method

IEC 62899-503-3:2021(E) specifies a measuring method of contact resistance for printed thin film transistors (TFTs) by the transfer length method (TLM). The method requires the fabrication of a test element group (TEG) with varying channel length (L) between source and drain electrodes. The method is intended for quality assessment of TFT electrode contacts and is suited for determining whether the contact resistance lies within a desired range.

General Information

Status
Published
Publication Date
23-Aug-2021
Technical Committee
Current Stage
PPUB - Publication issued
Completion Date
24-Aug-2021
Ref Project

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IEC 62899-503-3:2021 - Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method
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IEC 62899-503-3
Edition 1.0 2021-08
INTERNATIONAL
STANDARD
colour
inside
Printed electronics –
Part 503-3: Quality assessment – Measuring method of contact resistance for the
printed thin film transistor – Transfer length method
IEC 62899-503-3:2021-08(en)
---------------------- Page: 1 ----------------------
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IEC 62899-503-3
Edition 1.0 2021-08
INTERNATIONAL
STANDARD
colour
inside
Printed electronics –
Part 503-3: Quality assessment – Measuring method of contact resistance for
the printed thin film transistor – Transfer length method
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 29.045; 31.080.30 ISBN 978-2-8322-1013-8

Warning! Make sure that you obtained this publication from an authorized distributor.

® Registered trademark of the International Electrotechnical Commission
---------------------- Page: 3 ----------------------
– 2 – IEC 62899-503-3:2021 © IEC 2021
CONTENTS

FOREWORD ........................................................................................................................... 3

INTRODUCTION ..................................................................................................................... 5

1 Scope .............................................................................................................................. 6

2 Normative references ...................................................................................................... 6

3 Terms and definitions ...................................................................................................... 6

4 Symbols and abbreviated terms ....................................................................................... 7

5 Measuring method of contact resistance .......................................................................... 8

5.1 General ................................................................................................................... 8

5.2 Preparation of TEGs ............................................................................................... 8

5.3 Measuring apparatus .............................................................................................. 9

5.4 Environmental conditions and storage ..................................................................... 9

5.5 Measuring procedure .............................................................................................. 9

5.6 Data analysis ........................................................................................................ 10

5.6.1 Calculation procedure of normalized resistances for each TEG...................... 10

5.6.2 Derivation procedure of contact resistance (R ) ............................................. 10

5.7 Report .................................................................................................................. 11

Annex A (informative) Examples of sets of source and drain electrodes layouts in a

TEG ...................................................................................................................................... 12

Bibliography .......................................................................................................................... 13

Figure 1 – Schematic structure of printed thin film transistors (TFTs) ...................................... 7

Figure 2 – Measurement configuration .................................................................................... 8

Figure 3 – Example of plots of the total resistance R versus the distance between the

source and drain electrode (channel length) L....................................................................... 10

Figure A.1 – Example of a set of source and drain electrodes in a TEG ................................ 12

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IEC 62899-503-3:2021 © IEC 2021 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
PRINTED ELECTRONICS –
Part 503-3: Quality assessment – Measuring method of contact
resistance for the printed thin film transistor – Transfer length method
FOREWORD

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International Standard IEC 62899-503-3 has been prepared by IEC technical committee 119:

Printed Electronics.
The text of this International Standard is based on the following documents:
FDIS Report on voting
119/359/FDIS 119/368/RVD

Full information on the voting for its approval can be found in the report on voting indicated in

the above table.
The language used for the development of this International Standard is English.
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– 4 – IEC 62899-503-3:2021 © IEC 2021

This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in

accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available

at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are

described in greater detail at www.iec.ch/standardsdev/publications.

A list of all parts in the IEC 62899 series, published under the general title Printed electronics,

can be found on the IEC website.

The committee has decided that the contents of this document will remain unchanged until the

stability date indicated on the IEC website under webstore.iec.ch in the data related to the

specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
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contents. Users should therefore print this document using a colour printer.
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IEC 62899-503-3:2021 © IEC 2021 – 5 –
INTRODUCTION

In a thin film transistor (TFT), contact resistance occurs at the contacting interfaces at the gate,

source and drain electrodes, and the TFT semiconductor layer. While contact resistance is

negligible at the gate electrode, it reduces the effective voltage applied to the source and drain

electrodes. Therefore, the evaluation of the contact resistance can provide important insights

related to the performance characteristics of printed TFTs. Especially for printed electronics,

the contact resistance varies with the employed materials, printing processes and the time

series variation because the interface is made of simple contact obtained by additive

manufacturing instead of a junction obtained by vacuum deposition and etching processes.

Thus, the performance of printed TFTs is greatly influenced by the value of contact resistance.

A change of the contact resistance is therefore considered to be a key factor for a proper

interpretation of performance, lifetime, and reliability of a printed TFT.

To determine the contact resistance, several techniques, including but not limited to two-

terminal contact method, four-terminal contact method, six-terminal contact method, transfer

length method, and scanning probe potentiometer technique can be used. The transfer length

method (TLM) in particular has a practical advantage because the supplier can test discrete

devices, which have the same structure as the original printed TFT, on a common substrate

simultaneously. Furthermore, the TLM is cost-effective because the user can meas
...

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