Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method

IEC 62899-503-3:2021(E) specifies a measuring method of contact resistance for printed thin film transistors (TFTs) by the transfer length method (TLM). The method requires the fabrication of a test element group (TEG) with varying channel length (L) between source and drain electrodes. The method is intended for quality assessment of TFT electrode contacts and is suited for determining whether the contact resistance lies within a desired range.

General Information

Status
Published
Publication Date
23-Aug-2021
Technical Committee
Drafting Committee
Current Stage
PPUB - Publication issued
Start Date
17-Sep-2021
Completion Date
24-Aug-2021
Ref Project

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IEC 62899-503-3
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Edition 1.0 2021-08
INTERNATIONAL
STANDARD

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Printed electronics –
Part 503-3: Quality assessment – Measuring method of contact resistance for the
printed thin film transistor – Transfer length method
IEC 62899-503-3:2021-08(en)

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IEC 62899-503-3

®


Edition 1.0 2021-08




INTERNATIONAL



STANDARD








colour

inside










Printed electronics –

Part 503-3: Quality assessment – Measuring method of contact resistance for

the printed thin film transistor – Transfer length method

























INTERNATIONAL

ELECTROTECHNICAL


COMMISSION





ICS 29.045; 31.080.30 ISBN 978-2-8322-1013-8




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® Registered trademark of the International Electrotechnical Commission

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– 2 – IEC 62899-503-3:2021 © IEC 2021
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Symbols and abbreviated terms . 7
5 Measuring method of contact resistance . 8
5.1 General . 8
5.2 Preparation of TEGs . 8
5.3 Measuring apparatus . 9
5.4 Environmental conditions and storage . 9
5.5 Measuring procedure .
...

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