SIST EN 60747-5-3:2002
(Main)Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic devices - Measuring methods
Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic devices - Measuring methods
Describes the measuring methods applicable to the optoelectronic devices which are not intended to be used in the fibre optic systems or subsystems.
Einzel-Halbleiterbauelemente und integrierte Schaltungen -- Teil 5-3: Optoelektrische Bauelemente - Messverfahren
Dispositifs discrets à semiconducteurs et circuits intégrés -- Partie 5-3: Dispositifs optoélectroniques - Méthodes de mesure
Décrit les méthodes de mesure applicables aux dispositifs optoélectroniques qui ne sont pas prévus pour être utilisés dans les systèmes ou sous-systèmes à fibres optiques.
Discrete semiconductor devices and integrated circuits - Optoelectronic devices - Measuring methods (IEC 60747-5-3:1997)
General Information
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Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN 60747-5-3:2002
01-september-2002
Discrete semiconductor devices and integrated circuits - Optoelectronic devices -
Measuring methods (IEC 60747-5-3:1997)
Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic
devices - Measuring methods
Einzel-Halbleiterbauelemente und integrierte Schaltungen -- Teil 5-3: Optoelektrische
Bauelemente - Messverfahren
Dispositifs discrets à semiconducteurs et circuits intégrés -- Partie 5-3: Dispositifs
optoélectroniques - Méthodes de mesure
Ta slovenski standard je istoveten z: EN 60747-5-3:2001
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
31.260 Optoelektronika, laserska Optoelectronics. Laser
oprema equipment
SIST EN 60747-5-3:2002 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
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EUROPEAN STANDARD EN 60747-5-3
NORME EUROPÉENNE
EUROPÄISCHE NORM July 2001
ICS 31.260
English version
Discrete semiconductor devices and integrated circuits
Part 5-3: Optoelectronic devices -
Measuring methods
(IEC 60747-5-3:1997)
Dispositifs discrets à semiconducteurs et Einzel-Halbleiterbauelemente und
circuits intégrés integrierte Schaltungen
Partie 5-3: Dispositifs optoélectroniques - Teil 5-3: Optoelektronische Bauelemente -
Méthodes de mesure Meßverfahren
(CEI 60747-5-3:1997) (IEC 60747-5-3:1997)
This European Standard was approved by CENELEC on 2000-12-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy, Luxembourg, Netherlands, Norway,
Portugal, Spain, Sweden, Switzerland and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2001 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60747-5-3:2001 E
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EN 60747-5-3:2001 - 2 -
Foreword
The text of the International Standard IEC 60747-5-3:1997, prepared by SC 47C, Flat panel display
devices, of IEC TC 47, Semiconductor devices, was submitted to the Unique Acceptance Procedure
and was approved by CENELEC as EN 60747-5-3 on 2000-12-01 without any modification.
This standard should be read jointly with IEC 60747-1, EN 62007-1 and EN 62007-2.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2002-01-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2004-01-01
Annexes designated "normative" are part of the body of the standard.
Annexes designated "informative" are given for information only.
In this standard, annex ZA is normative and annex A is informative.
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60747-5-3:1997 was approved by CENELEC as a
European Standard without any modification.
__________
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- 3 - EN 60747-5-3:2001
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
This European Standard incorporates by dated or undated reference, provisions from other
publications. These normative references are cited at the appropriate places in the text and the
publications are listed hereafter. For dated references, subsequent amendments to or revisions of any
of these publications apply to this European Standard only when incorporated in it by amendment or
revision. For undated references the latest edition of the publication referred to applies (including
amendments).
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
1)
IEC 60068-1 1988 Environmental testing EN 60068-1 1994
Part 1: General and guidance
IEC 60270 1981 Partial discharge measurements - -
1)
EN 60068-1 includes Corrigendum October 1988 + A1:1992 to IEC 60068-1:1988.
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NORME
CEI
INTERNATIONALE
IEC
60747-5-3
INTERNATIONAL
Première édition
STANDARD
First edition
1997-08
Dispositifs discrets à semiconducteurs
et circuits intégrés –
Partie 5-3:
Dispositifs optoélectroniques –
Méthodes de mesure
Discrete semiconductor devices
and integrated circuits –
Part 5-3:
Optoelectronic devices –
Measuring methods
© IEC 1997 Droits de reproduction réservés ⎯ Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in
utilisée sous quelque forme que ce soit et par aucun any form or by any means, electronic or mechanical,
procédé, électronique ou mécanique, y compris la photo- including photocopying and microfilm, without permission in
copie et les microfilms, sans l'accord écrit de l'éditeur. writing from the publisher.
International Electrotechnical Commission 3, rue de Varembé Geneva, Switzerland
Telefax: +41 22 919 0300 e-mail: inmail@iec.ch IEC web site http: //www.iec.ch
CODE PRIX
Commission Electrotechnique Internationale
V
PRICE CODE
International Electrotechnical Commission
Pour prix, voir catalogue en vigueur
For price, see current catalogue
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60747-5-3 © IEC:1997 – 3 –
CONTENTS
Page
FOREWORD . 5
Clause
1 Scope. 7
2 Normative references. 7
3 Measuring methods for photoemitters . 7
3.1 Luminous intensity of light-emitting diodes (I ). 7
v
3.2 Radiant intensity of infrared-emitting diodes (I ) . 9
e
3.3 Peak-emission wavelength (λ ), spectral radiation bandwidth (∆λ), and number of
p
longitudinal modes (n ) . 11
m
3.4 Emission source length and width and astigmatism of a laser diode without pigtail 17
3.5 Half-intensity angle and misalignment angle of a photoemitter . 19
4 Measuring methods for photosensitive devices. 25
4.1 Reverse current under optical radiation of photodiodes including devices with or
without pigtails (I or I ) and collector current under optical radiation of
R(H) R(e)
phototransistors (I or I ) . 25
C(H) C(e)
4.2 Dark current for photodiodes I and dark currents for phototransistors
R
I , I , I . 29
CEO ECO EBO
4.3 Collector-emitter saturation voltage V of phototransistors. 31
CE(sat)
5 Measuring methods for photocouplers. 33
5.1 Current transfer ratio (h ) . 33
F(ctr)
5.2 Input-to-output capacitance (C ). 35
io
5.3 Isolation resistance between input and output (r ). 37
IO
5.4 Isolation test. 39
5.5 Partial discharges of photocouplers. 41
5.6 Collector-emitter saturation voltage V of a photocoupler . 49
CE(sat)
5.7 Switching times t t of a photocoupler. 53
on, off
Annex A (informative) – Cross references index. 59
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60747-5-3 © IEC:1997 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
__________
DISCRETE SEMICONDUCTOR DEVICES
AND INTEGRATED CIRCUITS –
Part 5-3: Optoelectronic devices –
Measuring methods
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization
for Standardization (ISO) in accordance with conditions determined by agreement between the two
organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical reports or guides and they are accepted by the National Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-5-3 has been prepared by subcommittee 47C:
Optoelectronic, display and imaging devices, of IEC technical committee 47: Semiconductor
devices.
This first edition replaces partially the second edition of IEC 60747-5 (1992) and constitutes a
technical revision (see also annex A: Cross references index).
It should be read jointly with IEC 60747-1, IEC 62007-1 and IEC 62007-2.
The text of this standard is based partially on IEC 60747-5 (1992) and partially on the following
documents:
FDIS Report on voting
47C/173/FDIS 47C/186/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
Annex A is for information only.
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60747-5-3 © IEC:1997 – 7 –
DISCRETE SEMICONDUCTOR DEVICES
AND INTEGRATED CIRCUITS –
Part 5-3: Optoelectronic devices –
Measuring methods
1 Scope
This part of IEC 60747 describes the measuring methods applicable to the optoelectronic
devices which are not intended to be used in the fibre optic systems or subsystems.
2 Normative references
The following normative documents contain provisions which, through reference in this text,
constitute provisions of this part of IEC 60747. At the time of publication, the editions indicated
were valid. All normative documents are subject to revision, and parties to agreements based
on this part of IEC 60747 are encouraged to investigate the possibility of applying the most
recent editions of the normative documents indicated below. Members of IEC and ISO maintain
registers of currently valid International Standards.
IEC 60068-1:1988, Environmental testing – Part 1: General and guidance
IEC 60270:1981, Partial discharge measurements
3 Measuring methods for photoemitters
3.1 Luminous intensity of light-emitting diodes (I )
v
a) Purpose
To measure the luminous intensity of semiconductor light-emitting diodes.
The method can be applied to three possible measurement variants:
Variant 1
Rotation of the diode around its mechanical axis for an accurate location of the minimum
and/or maximum value.
Variant 2
Alignment of the diode optical axis with that of the optical bench.
Variant 3
Positioning according to a reference corresponding to the type of the diode envelope and
allowing a reproducible mechanical orientation.
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60747-5-3 © IEC:1997 – 9 –
b) Circuit diagram
Figure 1
c) Circuit description and requirements
G = current source
D = light-emitting diode being measured
PD = photodetector including the diaphragm D of area A
1
D , D = Diaphragms intended to suppress parasitic radiations. D and D shall not limit
2 3 2 3
the solid angle
d = distance between the diode being measured and D .
1
The spectral sensitivity of the photometer shall be adjusted to the CIE (International
Commission on Illumination) standard observers curve in the wavelength region of the light
emitted by the diode. The photometer shall be calibrated in candelas at the distance d, with
diaphragm D in place.
1
The distance d shall be such that the solid angle viewed by the light source at the
diaphragm D (= A/d²) is less than 0,01 sr.
1
For pulse measurements, the current generator should provide current pulses of the
required amplitude, duration and repetition rate. The photodetector should have a rise time
sufficiently small in comparison with the pulse duration; it should be a peak-reading
instrument.
d) Measurement procedure
The diode being measured is positioned according to the variant chosen.
The specified current is applied and the luminous intensity is measured on the photodetector.
e) Specified conditions
– Ambient temperature and, where appropriate, the atmospheric conditions.
– Forward current in the diode and, where applicable, duration and repetition rate.
– Variant: 1, 2 or 3.
3.2 Radiant intensity of infrared-emitting diodes (I )
e
a) Purpose
To measure the radiant intensity of semiconductor infrared-emitting diodes.
The method can apply to three possible measurement variants:
Variant 1
Rotation of the diode around its mechanical axis for an accurate location of the minimum
and/or maximum value.
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60747-5-3 © IEC:1997 – 11 –
Variant 2
Alignment of the diode optical axis with that of the optical bench.
Variant 3
Positioning according to a reference corresponding to the type of the diode envelope and
allowing a reproducible mechanical orientation.
b) Circuit diagram
Figure 2
c) Circuit description and requirements
G = current source
D = infrared-emitting diode being measured
RM = radiometer including the diaphragm D of area A
1
D , D = diaphragms intended to suppress parasitic radiations. D and D shall not limit
2 3 2 3
the solid angle
d = distance between the diode being measured and D .
1
The radiant intensity I in the direction of the case axis should be measured by a
e
wavelength-independent detector (for example, a thermocouple element) and the radiometer
shall be calibrated in W/sr at the distance d with diaphragm D in place.
1
The distance d shall be such that the solid angle viewed by the infrared source at the
diaphragm D (= A/d²) is less than 0,01 sr.
1
For pulse measurements, the current generator shall provide current pulses of the required
amplitude, duration and repetition rate. The radiometer shall have a rise time sufficiently
small in comparison with the pulse duration; it shall be a peak-reading instrument.
d) Measurement procedure
The diode being measured is positioned according to the variant chosen.
The specified current is applied to the diode and the radiant intensity is measured on the
radiometer.
e) Specified conditions
– Ambient temperature and, where appropriate, the atmospheric conditions.
– Forward current in the diode and, where applicable, duration and repetition rate.
– Variant: 1, 2 or 3.
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60747-5-3 © IEC:1997 – 13 –
3.3 Peak-emission wavelength (λ ) spectral radiation bandwidth (∆λ) and number of
p
longitudinal modes ( )
n
m
a) Purpose
To measure the peak-emission wavelength and the spectral radiation bandwidth of emitting
devices and to determine the number of longitudinal modes of laser diodes.
b) Circuit diagram
Figure 3 – Basic circuit
c) Circuit description and requirements
D = device being measured
L = focusing lens systems
G = generator (pulsed or d.c.)
M = monochromator
D , D = diaphragms intended to suppress parasitic radiations, where appropriate.
2 3
RM = radiometer (including diaphragm D ).
1
The wavelength resolution and the bandwidth of the monochromator shall be such that the
measurement is carried out with adequate accuracy.
The spectral response of the radiometer shall be calibrated. For convenience of
measurement, the peak of the curve may represent 100 %.
d) Precautions to be observed
If the transmission factor of the monochromator and the radiometer sensitivity are not
constant over the required range of wavelength, the recorded values should be corrected.
For measurement of the laser diode, radiant power reflected into the laser diode shall be
minimized to ensure that the spectral response is not significantly affected.
e) Measurement procedure
1) Peak emission wavelength and spectral radiation bandwidth of a light-emitting diode, or an
infrared-emitting diode, or a single-mode laser diode
The specified current is applied to the device being measured.
The wavelength of the monochromator is adjusted within the required range until the
maximum reading on the radiometer has been achieved. The wavelength corresponding to
this peak value is recorded. This is the peak-emission wavelength (λ ) (see figure 4).
p
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60747-5-3 © IEC:1997 – 15 –
The wavelength of the monochromator is then adjusted on either side of λ until the
p
maximum reading is halved. These two wavelengths (λ and λ on figure 4) are recorded.
1 2
Their difference is the spectral radiation bandwidth of the infrared-emitting or light-emitting
device (see figure 4).
Figure 4 – Radiant power as function of wavelength
2) Peak-emission wavelength, spectral radiation bandwidth and number of longitudinal modes
of a multimode laser diode
2.1) Peak-emission wavelength of a multimode laser diode
A current corresponding to the specified optical power output is applied to the device being
measured.
The wavelength of the monochromator is adjusted within the required range until the highest
of the various maxima is indicated.
The wavelength corresponding to this value is recorded. This is the peak-emission
wavelength (λ ) (see figure 5).
p
2.2) Spectral radiation bandwidth of a multimode laser diode
The monochromator is set to a long wavelength and then adjusted progressively to shorter
which the specified percentage of the highest
wavelengths. Record the first wavelength at
reading recorded under e) 2.1) is obtained or exceeded. The monochromator is set to a
short wavelength and thus adjusted progressively to longer wavelengths. Record the first
wavelength at which the specified percentage of the highest reading recorded under e)
2.1) is obtained or exceeded. The difference between the two recorded values is the
spectral radiation bandwidth of the laser diode (∆λ) (see figure 5).
2.3) Number of longitudinal modes of a multimode laser diode
The spectral radiation bandwidth as in e) 2.2) above is measured and then the number of
modes (n ) within that bandwidth including the two modes that define the limit of the
m
bandwidth is counted (see figure 5).
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60747-5-3 © IEC:1997 – 17 –
∆λ = spectral radiation bandwidth
Figure 5
f) Specified conditions
– For LED and IRED:
• ambient or case temperature;
• forward current (d.c. or pulse), as specified.
– For laser diodes:
• ambient, case or submount temperature;
• radiant power or forward current;
• percentage of peak emission if other than 50 %.
3.4 Emission source length and width and astigmatism of a laser diode without pigtail
a) Purpose
To measure the emission source size on the facet of the laser diode with respect to a
defined axis and the astigmatism of the optical beam emitted from the laser diode.
b) Measuring equipment
Figure 6
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60747-5-3 © IEC:1997 – 19 –
c) Equipment description and requirements
G = current source
D = device being measured
L = lens system
SD = scanning photodetector with a narrow slit
LS = light source with filter or LED the emission wavelength of which is close to that
of the device being measured
BS = beam splitter
d >> d
2 1
d) Precautions to be observed
The lens system L shall be substantially achromatic over the range of wavelengths
encompassed by the light source LS and the device D.
e) Measurement procedure
Emission source size
The light source LS is turned on and the lens system L adjusted to obtain a focused image
of the front face of the device D on the photodetector SD. Distances d and d are then
1 2
read.
The specified d.c. current or the d.c. current corresponding to the specified radiant power φ
e
is applied to the device being measured D.
The scanning direction of the photodetector SD is aligned with the major and minor axes of
the focused image.
The photodetector SD is scanned along the major and the minor axes. The length and width
of the emission source are given by the distance between the 3 dB power points along the
major and minor axes multiplied by d /d .
1 2
Astigmatism d
A
The light source LS is turned on and the lens system L adjusted to obtain a focused image
of the front facet of the device D on the photodetector SD. Distances d and d are read.
1 2
The scanning direction of the photodetectors align with SD the major and the minor axes of
the focused image.
The lens system L is moved along the optical axis toward the device D until the emission
source length along the major axis is minimized.
The distance d traversed by the lens system L is measured.
3
The lens system is returned to the original position. The procedure is repeated for the minor
axis. The distance d traversed by the lens system L is measured.
4
The difference between d and d , multiplied by (1 – d ²/d ²), is the astigmatism.
3 4 1 2
f) Specified conditions
– Ambient, case or submount temperature.
– Direct forward current or radiant power.
– Reference axes (major and minor axes).
3.5 Half-intensity angle and misalignment angle of a photoemitter
a) Purpose
To measure the spatial distribution of the radiation from a photoemitter.
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60747-5-3 © IEC:1997 – 21 –
Axes X and Y define a mechanical reference plane of the device being measured D, e.g. the mounting angle.
The angle ϕ defines the orientation of the device D in that plane.
Figure 7
The half intensity angle is the angle within which the luminous or radiant intensity is greater
than or equal to half of the maximum intensity. This angle is θ defined for a specified
1/2
plane which in turn is defined by ϕ.
The misalignment angle ∆θ is the angle between the optical and mechanical axes.
Figure 8
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60747-5-3 © IEC:1997 – 23 –
b) Diagram
The basic optical arrangement and definition is shown in the following figure:
Figure 9
c) Measurement description and requirements
D = device being measured
PD = photodetector
Axis Z = defined mechanical axis of the device being measured
Axis PD = axis of photodetector
θ = inclinaison angle of axis Z to axis PD
NOTE – The solid angle, defined by the device being measured and the aperture of the photodiode, shall be small.
The solid angle is considered small if the measurement result does not change significantly when the solid angle is
halved.
The device being measured D shall be mounted in a fixture which allows:
– precise, reproducible positioning of the device D;
– changes to the angle θ, keeping the centre of the optical port of the device D fixed;
– measurement of the angle of inclinaison θ;
– rotation of the device D around its Z axis;
– measurement of the angle of rotation about the X axis.
d) Precautions to be observed
Under consideration.
e) Measurement procedure
The specified current is applied to the device being measured D.
The mechanical axis of the device D is aligned along the axis of the photodetector, i.e.
θ = 0, and measure the signal on the photodetector.
This value is set at I = 100 %.
0
The device D is inclinated and the relative intensity I/I versus θ is plotted.
0
The preferred plot will be in polar diagram form. Other formats e.g. cartesian may be used
when defined in the blank detail specification.
The half intensity angle θ is the angle between the two points at which I = I .
1/2 max/2
The misalignment angle is the angle between the directions corresponding to I and I .
max 0
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60747-5-3 © IEC:1997 – 25 –
f) Specified conditions
– Ambient, case or submount temperature.
– I or φ .
F e
– Mechanical reference plane.
– Angle ϕ.
4 Measuring methods for photosensitive devices
4.1 Reverse current under optical radiation of photodiodes including devices with or
without pigtails (I or I ) and collector current under optical radiation of
R(H) R(e)
phototransistors (I or I )
C(H) C(e)
a) Purpose
To measure the reverse current under optical radiation of photodiodes including devices
with or without pigtails and the collector current under optical radiation of phototransistors.
b) Measuring equipment
One of the four following variants shall be used:
Variant 1
Rotation of the device around its mechanical axis for an accurate location of the maximum
value.
Variant 2
Alignment of the device optical axis with that of the optical bench.
Variant 3
Positioning according to a reference specified for the type of device envelope, to obtain a
reproducible mechanical orientation.
Variant 4
For devices with pigtails.
Alignment of the optical port of the device to receive the radiant power with focusing
means.
D or T = device being measured
Figure 10
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60747-5-3 © IEC:1997 – 27 –
c) Circuit diagrams
Figure 11a – Phototransistor Figure 11b – Photodiode
d) Equipment description and requirements
The device being measured is fixed in a measuring socket that is mounted on a calibrated
optical bench (variant 1, 2, 3 or 4) or on a calibrated equipment (variant 3).
The illuminant shall be
either:
i) a standard illuminant (not monochromatic), consisting of a calibrated standard lamp, with
its regulated power supply and an ammeter;
or:
ii) a monochromatic illuminant consisting of either:
an equipment such as described in item i) above, plus an interference filter or any other
system (monochromator, etc.) having a specified or known peak-transmission
wavelength and spectral radiation bandwidth,
or:
any other calibrated device (for example a light-emitting diode or an infrared-emitting
diode), having a known peak-emission wavelength and spectral radiation bandwidth.
For fibre optic devices with pigtails:
The illuminant such as described in item ii) shall be used.
e) Precautions to be observed
– Overheating the device being measured by optical radiation from the source shall be
avoided. For levels in excess of 200 W/m², a thermal shield arranged as a shutter to limit
the duration of exposure is recommended.
– Cleanliness of optical surfaces shall be ensured.
– Light sources shall be stabilized before being used for measurement purposes.
– When a standard illuminant is used as a light source, a diaphragm intended to suppress
parasitic radiation shall be placed in front of the device being measured.
For devices with pigtails:
Only the optical port of the device shall be irradiated.
f)
Measurement procedure
The temperature conditions are set to the specified value.
The socket is placed at a distance from the illuminant corresponding to the specified
illuminance (irradiance).
The device to be measured is inserted into its socket and is biased at the specified value.
For variant 1 only, the device is rotated around its mechanical axis. Read the minimum and
the maximum
...
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