prEN IEC 63419:2022
(Main)Guideline for switching reliability evaluation procedures for gallium nitride power conversion devices
Guideline for switching reliability evaluation procedures for gallium nitride power conversion devices
This publication presents guidelines for evaluating the switching reliability of GaN power switches. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions and cascode GaN power switches. It covers the following aspects: a) An approach for broad coverage, using the switching locus to represent switching stress in a standardized manner. b) The development of a lifetime model, based upon the type of application switching locus. c) The validation of reliable operation under application-use conditions. The publication will result in common methods for representing, evaluating and modeling the switching stress on GaN power switches, and ensuring their reliable operation in an application.
Leitfaden für Verfahren zur Bewertung der Schaltzuverlässigkeit von Galliumnitrid-Leistungsumwandlungsgeräten
Lignes directrices relatives aux procédures d’évaluation de la fiabilité de commutation pour convertisseurs de puissance en nitrure de gallium
Smernice za postopke ocenjevanja stikalne zanesljivosti galij-nitridnih razsmernikov
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
01-april-2022
Smernice za postopke ocenjevanja stikalne zanesljivosti galij-nitridnih
razsmernikov
Guideline for Switching Reliability Evaluation procedures for Gallium Nitride Power
Conversion Devices
Ta slovenski standard je istoveten z: prEN IEC 63419:2022
ICS:
29.200 Usmerniki. Pretvorniki. Rectifiers. Convertors.
Stabilizirano električno Stabilized power supply
napajanje
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
47/2744/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 63419 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2021-12-31 2022-03-25
SUPERSEDES DOCUMENTS:
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:
TC 91,TC 104
Other TC/SCs are requested to indicate their interest, if any, in
this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of which they are
aware and to provide supporting documentation.
TITLE:
Guideline for Switching Reliability Evaluation procedures for Gallium Nitride Power Conversion Devices
PROPOSED STABILITY DATE: 2027
NOTE FROM TC/SC OFFICERS:
This CDV is based upon JEDEC document JEP180 (title: Guideline for Switching Reliability Evaluation procedures for
Gallium Nitride Power Conversion Devices) and is circulated according to the IEC fast-track procedure (see F.2 of
ISO/IEC Directives, Part 1, 2021).
This document is proposed by the US National Committee. TC 47 / WG 8 at the October 2021 meeting approved the
document for fast-track procedure and was presented to TC 47 Plenary at the October 2021 Plenary. TC 47 Secretariat
has reviewed and approved the circulation of the CDV according to the fast-track procedure.
This document is allocated to TC 47 / WG 8 and the project leader is Dr Stephanie Watts Butler.
This document is also of interest to TC 47/WG 5.
file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions. You may not copy
or "mirror" the file or printed version of the document, or any part of it, for any other purpose without permission in writing from IEC.
63419/Ed1/CDV IEC – 2 – 47/2744/CDV
1 CONTENTS
3 FOREWORD . 4
4 INTRODUCTION . 6
5 1 Scope . 8
6 2 Normative references . 8
7 3 Terms, definitions, symbols and abbreviated terms . 8
8 4 Description of test elements . 9
9 4.1 Objectives of stress testing for switching reliability . 9
10 4.2 Technology DUTs and product DUTs . 10
11 4.3 Stressors and associated lifetime acceleration factors . 10
12 4.4 Test vehicles, product vehicles, and stress test beds . 10
13 4.5 Measurements, monitoring, and control . 11
14 4.6 Sample sizes . 12
15 4.7 Failure criteria . 12
16 5 The switching locus curve and its usage . 12
17 5.1 The switching locus curve . 12
18 5.2 Obtaining broad switching reliability coverage . 14
19 6 Developing lifetime models for switching stress . 15
20 6.1 General . 15
21 6.2 Overall methodology . 16
22 6.3 Lifetime model . 17
23 6.4 Model functions . 17
24 6.5 Prediction of GaN switch lifetime . 17
25 7 Dynamic High Temperature Operating Life (DHTOL) test . 18
26 7.1 General . 18
27 7.2 DUT type . 18
28 7.3 Stress test bed . 18
29 7.4 Procedure . 18
30 7.5 Stress conditions . 19
31 8 References . 21
32 ANNEX A (Informative) Obtaining parameter space for accelerated life test with
33 switching stress . 22
34 Annex B (informative) Example experiment sequence for obtaining times-to-failure and
35 lifetime models . 23
36 ANNEX C (Informative) Examples of models and expressions for lifetime . 25
37 C.1 References . 26
39 Figure 1 — Simplified explanation of the approach for assuring GaN product reliability.
40 It consists of three key aspects as shown. The approach is not intended to be
41 restrictive, as is described in the text . 7
42 Figure 2 — Simplified examples of switching locus plots for DUT operation in circuits . 13
63419/Ed1/CDV IEC – 3 – 47/2744/CDV
43 Figure 3 — HTRB is a one-dimensional example of a harsher stress covering a range of
44 milder operating conditions. . 14
45 Figure 4 — Stress-testing at a more stressful switching locus (solid lines) covers a
46 range of use-cases at less-stressful switching loci (dashed lines). Slew rate or transition
47 time information needs to be provided for meaningful comparisons. . 15
48 Figure 5 — Synopsis of methodology for obtaining wearout models based on switching
49 accelerated tests with one stressor varied at a time and its wearout model obtained from
50 the desired failure fraction . 16
51 Figure 6 — An example of the DHTOL turn-on hard-switching locus, along with a typical
52 less-harsh application-use case . 20
53 Figure B.1 — A figure to illustrate how the independence of stressors to failure-creation
54 can be validated. First, two sets stressors are used to get the acceleration models and
55 then one or more different stress conditions are used to for validating the model. . 24
57 Table 1 — Attributes of the two types of stress test beds . 11
58 Table 2 — DHTOL recommendations . 18
59 Table 3 — Best-practice DHTOL conditions . 19
60 Table C.1 — Some expressions for time to failure for various wearout processes in
61 MOSFETs. . 25
63419/Ed1/CDV IEC – 4 – 47/2744/CDV
65 INTERNATIONAL ELECTROTECHNICAL COMMISSION
66 ____________
68 GUIDELINE FOR SWITCHING RELIABILITY EVALUATION PROCEDURES
69 FOR GALLIUM NITRIDE POWER CONVERSION DEVICES
71 FOREWORD
72 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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102 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
103 indispensable for the correct application of this publication.
104 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
105 patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
106 IEC 63419 has been prepared by IEC technical committee 47: Semiconductor devices. It is an
107 International Standard.
108 This standard is based upon JEP180. It is used with permission of the copyright holder, JEDEC
109 Solid State Technology Association
110 The text of this International Standard is based on the following documents:
Draft Report on voting
XX/XX/FDIS XX/XX/RVD
63419/Ed1/CDV IEC – 5 – 47/2744/CDV
112 Full information on the voting for its approval can be found in the report on voting indicated in
113 the above table.
114 The language used for the development of this International Standard is English.
115 This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
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117 at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
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119 The committee has decided that the contents of this document will remain unchanged until the
120 stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
121 the specific document. At this date, the document will be
122 • reconfirmed,
123 • withdrawn,
124 • replaced by a revised edition, or
125 • ame
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